公开(公告)号：EP0788168A1

公开(公告)日：1997-08-06

申请号：EP96830040.0

申请日：1996-01-31

Applicant: SGS-THOMSON MICROELECTRONICS s.r.l.

Inventor： Clementi, Cesare ,  Ghidini, Gabriella ,  Alessandri, Mauro

IPC: H01L29/423 ,  H01L21/336 ,  H01L29/788

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/42328 ,  H01L29/66825

Abstract: A process of fabricating a floating-gate memory device, the process including the steps of: forming a stack of superimposed layers including a floating gate region (20), a dielectric region (21), and a control gate region (22); and forming an insulating layer (35) of oxynitride to the side of the floating gate region to completely seal the floating gate region outwards and improve the retention characteristics of the memory device. The insulating layer (35) is formed during reoxidation of the sides of the floating gate region (20), after self-align etching the stack of layers (20-22) and implanting the source/drain of the cell.

Abstract translation: 制造浮动栅极存储器装置的方法，该方法包括以下步骤：形成叠置的层包含一浮动栅极区（20），介电区域（21），和控制栅极区域（22）的堆叠; 以及形成绝缘氧氮化物的层（35）到浮栅区域的一侧完全呼叫向外密封浮栅区，提高了存储装置的保持特性的。 在绝缘层（35）的浮置栅极区域（20）的侧面的再氧化过程中形成，之后自对准蚀刻层的堆叠（20-22）和注入单元的源极/漏极。