公开(公告)号：EP0822415A1

公开(公告)日：1998-02-04

申请号：EP96830438.6

申请日：1996-07-31

Applicant: SGS-THOMSON MICROELECTRONICS s.r.l.

Inventor： Ferrari, Paolo ,  Foroni, Mario ,  Vigna, Benedetto ,  Villa, Flavio

IPC: G01P15/00 ,  G01P15/08 ,  G01P15/125

CPC classification number: G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: The acceleration sensor is formed in a monocrystalline silicon wafer (4) forming part of a dedicated SOI substrate (50) presenting a first (1) and second (4) monocrystalline silicon wafer separated by an insulating layer (2) having an air gap (3). A well (15) is formed in the second wafer (4), over the air gap (3), and is subsequently trenched up to the air gap to release the monocrystalline silicon mass (23) forming the movable mass (24) of the sensor; the movable mass (24) has two numbers of movable electrodes (28a, 28b) facing respective pluralities of fixed electrodes (29a, 29b). In the idle condition, each movable electrode (28) is separated by different distances from the two fixed electrodes (29) facing the movable electrode.

Abstract translation: 加速度传感器在单晶硅晶片上形成（4）形成（50）呈现一个专用的SOI衬底的一部分的第一（1），并通过在在空气隙绝缘（2），其具有层分离的第二（4）单晶硅晶片（ 3）。 良好（15）形成在所述第二晶片（4），在所述空气间隙（3），并随后被开槽到空气间隙，以释放成形的可动质量块（24）的单晶硅的质量（23） 传感器; 运动质量块（24）具有可动电极的两个数（28A，28B）的面向固定电极的多个respectivement（29A，29B）。 在空闲状态下，每个可移动电极（28）由从面向可动电极的两个固定电极（29）不同的距离分离。

公开(公告)号：EP0828160A1

公开(公告)日：1998-03-11

申请号：EP96830464.2

申请日：1996-09-10

Applicant: SGS-THOMSON MICROELECTRONICS s.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Mastromatteo, Ubaldo

IPC: G01P1/00 ,  G01P15/11

CPC classification number: G01P15/11

Abstract: An acceleration sensor is described which is formed by planar technology on a substrate (10). It includes a core (11) of ferromagnetic material and, coupled conductively together by the core, a first winding (13) adapted to be connected to a power supply (14) and a second winding (15) adapted to be connected to circuit means (16) for measuring an electrical magnitude induced therein. The core (11) has two suspended portions which are free to bend as a result of an inertial force due to an accelerative movement of the sensor itself. The bending causes lengthening of the core (11) and hence a variation in the reluctance of the magnetic circuit. If a constant current is supplied to the first winding (13), a voltage is induced in the second winding (15) as a result of the variation in the magnetic flux caused by the variation in reluctance.

Abstract translation: 描述了通过平面技术在衬底（10）上形成的加速度传感器。 它包括铁磁材料的芯体（11），并且通过芯体导电地耦合在一起，适于连接到电源（14）的第一绕组（13）和适于连接到电路装置的第二绕组（15） （16），用于测量其中感应的电气量。 芯部（11）具有由于传感器本身的加速运动而由于惯性力而自由弯曲的两个悬挂部分。 弯曲导致芯部（11）的延长，从而导致磁路的磁阻变化。 如果向第一绕组（13）提供恒定电流，则由于由磁阻的变化引起的磁通量的变化，在第二绕组（15）中感应出电压。

公开(公告)号：EP0826967A1

公开(公告)日：1998-03-04

申请号：EP96830459.2

申请日：1996-09-02

Applicant: SGS-THOMSON MICROELECTRONICS s.r.l.

Inventor： Ferrari, Paolo ,  Vigna, Benedetto

IPC: G01P1/00 ,  G01P15/12

CPC classification number: G01P15/124

Abstract: An acceleration sensor is described which is formed on a substrate (10) of p-type silicon. It includes a flexible element (13) of polycrystalline silicon anchored like a beam so as to be cantilevered from the substrate and two n-type surface regions formed in the substrate. The beam (13) has an end portion (14) facing the zone separating the two regions. These latter constitute the source and drain regions of an insulated-gate field-effect transistor and the beam (13) constitutes the gate electrode of the same transistor. When the structure is subjected to an acceleration, the beam bends so as to vary the thickness of the gate dielectric and hence modify the threshold voltage of the transistor.

Abstract translation: 描述了形成在p型硅的衬底（10）上的加速度传感器。 它包括多晶硅的柔性元件（13），其像梁一样被锚定以便从衬底悬臂并形成在衬底中的两个n型表面区域。 梁（13）具有面向分离两个区域的区域的端部（14）。 这些后者构成绝缘栅场效应晶体管的源极和漏极区，并且光束（13）构成同一晶体管的栅电极。 当结构受到加速时，光束弯曲以改变栅极电介质的厚度，并因此改变晶体管的阈值电压。

公开(公告)号：EP0822398A1

公开(公告)日：1998-02-04

申请号：EP96830435.2

申请日：1996-07-31

Applicant: SGS-THOMSON MICROELECTRONICS s.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Villa, Flavio

IPC: G01L9/06

CPC classification number: G01L9/0042 ,  G01L9/0055

Abstract: The pressure sensor is integrated in a SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements (10) and the electronic components (4, 6-8) integrated in the same chip, trenches (26) are formed in the upper wafer (23) of the substrate and extending from the surface to the layer of insulating material (22); the layer of insulating material (22) is chemically etched through the trenches (26) to form an opening (31) beneath the diaphragm (27); and a dielectric layer (25) is deposited to outwardly close the trenches (26) and the opening (31). Thus, the process is greatly simplified, and numerous packaging problems eliminated.

Abstract translation: 该压力传感器集成在使用绝缘层作为牺牲层的SOI（绝缘体上硅）衬底中，其通过化学蚀刻部分去除以形成隔膜。 为了制造传感器，在形成压电元件（10）和集成在同一芯片中的电子部件（4,6-8）之后，在基板的上晶片（23）中形成沟槽（26） 表面到绝缘材料层（22）; 通过沟槽（26）化学蚀刻绝缘材料层（22），以在隔膜（27）下面形成开口（31）; 并且沉积介电层（25）以向外关闭沟槽（26）和开口（31）。 因此，该过程被大大简化，并且消除了许多封装问题。

公开(公告)号：EP0822579A1

公开(公告)日：1998-02-04

申请号：EP96830437.8

申请日：1996-07-31

Applicant: SGS-THOMSON MICROELECTRONICS s.r.l.

Inventor： Foroni, Mario ,  Ferrari, Paolo ,  Vigna, Benedetto ,  Villa, Flavio

IPC: H01L21/00 ,  G01L9/00 ,  G01P15/08 ,  H01L21/762 ,  H01L21/764

CPC classification number: B81C1/00246 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2203/0728 ,  B81C2203/075 ,  G01L9/0042 ,  G01P15/0802 ,  H01L21/764

Abstract: The method includes the steps of: forming a sacrificial buried region of insulating material on a substrate (1); growing a semiconductor material layer (8) presenting a polycrystalline region (80) over the sacrificial buried region, and a monocrystalline region (81) elsewhere; selectively removing portions of the polycrystalline region (80) to form a trench (20) extending from the upper surface (11) Of the semiconductor material layer to the sacrificial buried region; and removing the sacrificial buried region via the trench (20). The portion (80') of the polycrystalline region (80) surrounded by the trench (20) thus forms a suspended structure separated and isolated thermally from the rest (80'', 81) of the semiconductor material layer. Using microelectronics processes, electronic components (12-14) are formed in the monocrystalline region (81), and dedicated regions (24) are formed at the suspended structure, so that the electronic components are integrated in the same chip with static, kinematic or dynamic microstructures (30).

Abstract translation: 该方法包括以下步骤：形成在衬底（1）绝缘材料的消耗隐埋层; 成长一半导体材料层（8）呈现在所述消耗隐埋层的多晶区域（80），和一个单晶区域（81）的其他地方; 选择性地去除从上表面（11）的半导体材料层到牺牲埋入区延伸出来的多晶区域（80），以形成沟槽（20）的部分; 并通过该沟槽（20）去除所述牺牲埋入区。 所述部分（80“）通过沟槽（20）所包围的多晶区域（80）的从而形成悬浮结构分离并从其余热（80分离的”半导体材料层的”，81）。 使用微电子工艺，电子部件（12-14）被形成在单晶区域（81），和专用区域（24）在所述悬挂结构上形成，所以没有电子元件被集成在与静态，运动或在相同的芯片 动态微结构（30）。

公开(公告)号：EP0822578A1

公开(公告)日：1998-02-04

申请号：EP96830436.0

申请日：1996-07-31

Applicant: SGS-THOMSON MICROELECTRONICS s.r.l.

Inventor： Villa, Flavio ,  Ferrari, Paolo ,  Vigna, Benedetto

IPC: H01L21/00 ,  H01L21/762 ,  H01L21/764 ,  G01L9/00 ,  G01N27/12

CPC classification number: G01N27/12 ,  H01L21/764

Abstract: The chemoresistive gas sensor comprises a heating element (12) integrated in a dedicated SOI substrate (100) having an air gap (3) in the intermediate oxide layer (2) between two wafers (1, 4) of monocrystalline silicon; the sensitive element (25) of tin oxide is formed over the heating element and separated from it by a dielectric insulating and protective layer. A trench (28), formed at the end of the fabrication of the device, extends from the surface (6) of the wafer (4) in which the heating element (12) is integrated, up to the air gap (3) to mechanically separate and insulate the sensitive element (25) from the rest of the chip, and so improve the mechanical characteristics, sensitivity and response of the sensor.

Abstract translation: 的抗化学气体传感器包括集成在具有在两个晶片之间的中间氧化物层（2）的空气间隙（3）的专用SOI衬底（100）的加热元件（12）（1，4）单晶硅; 锡氧化物的敏感元件（25）形成在所述加热元件和由介电绝缘和保护层与其分离。 沟槽（28），在所述器件的制造的端部形成，从所述表面（6）在晶片的（4），其中所述加热元件（12）被集成延伸，上升到气隙（3）到 机械分离和隔离从芯片的其余部分的敏感元件（25），因此改善的机械特性，灵敏度和传感器的响应。

公开(公告)号：EP0856825A1

公开(公告)日：1998-08-05

申请号：EP97830034.1

申请日：1997-01-31

Applicant: SGS-THOMSON MICROELECTRONICS s.r.l.

Inventor： Mastromatteo, Ubaldo ,  Vigna, Benedetto

IPC: G08B1/00 ,  G01N27/12

CPC classification number: G01N27/12

Abstract: To manufacture integrated semiconductor devices comprising chemoresistive gas microsensors, a semiconductor material body (1, 2) is first formed, on the semiconductor material body are successively formed, reciprocally superimposed, a sacrificial region (14a) of metallic material, formed at the same time and on the same level as metallic connection regions (14b, 14c) for the sensor, a heater element (21), electrically and physically separated from the sacrificial region (14a) and a gas sensitive element (25), electrically and physically separated from the heater element (21); openings (16, 28) are formed laterally with respect to the heater element (21) and to the gas sensitive element (25), which extend as far as the sacrificial region (14a) and through which the sacrificial region (14a) is removed at the end of the manufacturing process.

Abstract translation: 为了制造包括化学耐化学气体微传感器的集成半导体器件，首先形成半导体材料体（1,2），在半导体材料体上依次形成与之同时形成的金属材料的牺牲区域（14a） 并且在与用于传感器的金属连接区域（14b，14c）相同的水平处，与牺牲区域（14a）电气和物理分离的加热器元件（21）和气体敏感元件（25）在电和物理上与 加热器元件（21）; 开口（16,28）相对于加热器元件（21）和气体敏感元件（25）横向形成，其延伸到牺牲区域（14a）并且牺牲区域（14a）被移除 在制造过程结束时。

公开(公告)号：EP0852337A1

公开(公告)日：1998-07-08

申请号：EP96830654.8

申请日：1996-12-24

Applicant: SGS-THOMSON MICROELECTRONICS s.r.l.

Inventor： Murari, Bruno ,  Ferrari, Paolo ,  Vigna, Benedetto

IPC: G01P1/02 ,  G01P15/08

CPC classification number: G01P15/0802 ,  G01P1/023

Abstract: An inertial sensor (105) having a sensing element (115) formed on one surface of a chip (110) of semiconductor material and movable with respect to the chip (110), the sensing element (115) being enclosed in a sealed hollow structure (125), in which the hollow structure (125) includes a metal wall (130) disposed on the said surface around the sensing element (115) and a closure plate (135) fixed to the wall (130).

Abstract translation: 惯性传感器（105），其具有形成在半导体材料的芯片（110）的一个表面上并相对于芯片（110）可移动的感测元件（115），所述感测元件（115）被封闭在密封的中空结构 （125），其中所述中空结构（125）包括设置在所述感测元件（115）周围的所述表面上的金属壁（130）和固定到所述壁（130）的封闭板（135）。