公开(公告)号：JP2000022193A

公开(公告)日：2000-01-21

申请号：JP19029098

申请日：1998-07-06

Applicant: SHARP KK

Inventor： KIMURA TAKEYA

IPC: E04D13/18 ,  H01L31/042

Abstract: PROBLEM TO BE SOLVED: To suppress lowering of conversion efficiency incident to temperature rise of a solar cell module generating power through solar radiation efficiently. SOLUTION: An evaporation cooler 6 made of synthetic fibers is fixed to the rear surface of a rear surface protective film 3 in a module body (m) and part 7 for storing rain water 10 as cooling water is fixed to the lower end part of the module body (m). Lower end part 6a of the evaporation cooler 6 is immersed into the cooling water 11. The cooling water 11 permeates the evaporation cooler 6 made of synthetic fibers through capillarity and water is evaporated from the evaporation cooler 6 while robbing vaporization heat from the module body (m) temperature of which is raised with solar heat. Consequently, the module body (m) is cooled and lowering of conversion efficiency is suppressed thus increasing power generation.

公开(公告)号：JPH10173208A

公开(公告)日：1998-06-26

申请号：JP32946896

申请日：1996-12-10

Applicant: SHARP KK

Inventor： KIMURA TAKEYA

IPC: H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a method capable of manufacturing a solar cell simply and at low cost, which reduces a dark current in the cell and can raise the low-illuminance characteristics and photoelectric conversion efficiency of the cell. SOLUTION: A method of manufacturing a solar cell comprises a process, wherein a dopant agent is applied on the light-receiving surfaces of semiconductor substrates 1 by a spin coating method, the dopant-coated rears 20 of the substrates 1 are superposed 6n each other to heat-treat the rears 20, whereby while the dopant agent 3 is prevented from being diffused in the rears, diffused layers are respectively formed in the light-receiving surfaces 19 only.

公开(公告)号：JPH07135334A

公开(公告)日：1995-05-23

申请号：JP16117193

申请日：1993-06-30

Applicant: SHARP KK

Inventor： KIMURA TAKEYA ,  ASAI MASATO

IPC: H01L31/042 ,  H01L27/142

Abstract: PURPOSE:To provide a highly reliable solar cell where the positional shift is eliminated between a solar cell, a bypass diode, and an interconnector. CONSTITUTION:The method for fabricating a solar cell comprises a step for applying a surface electrode material, e.g. Ag paste 13', on a solar cell 10' and mounting a bypass diode 16 on it, and a step for firing the Ag paste 13' to secure the bypass diode 16. An interconnector 21 is welded to the upper face of the bypass diode 16 before it is mounted on the surface electrode.

公开(公告)号：JPH0321083A

公开(公告)日：1991-01-29

申请号：JP15547789

申请日：1989-06-16

Applicant: SHARP KK

Inventor： KIMURA TAKEYA

IPC: H01L31/10

Abstract: PURPOSE:To make it possible to reduce the size of components by short- circuiting a PN junction in a part of separation dead zone provided with PN junctions. CONSTITUTION:A part 15 which short-circuits a P layer 9 and N layer 8 is partially installed only to a separation dead zones 7 formed between one party of light receiving component 1 and the other party of light receiving component 2. Therefore, there is no need to form a short-circuit electrode all over the light receiving components 1 and 2. The carriers generated at a light receiving diffusion section which adjoins each light receiving component 1 and 2 are inhibited by P or N diffusion layers 8 and 9 provided in the separation dead zone 7 and absorbed by a dummy diode short-circuited, which minimizes the effect of crosstalk. It is, therefore, possible to narrow the width of the separation dead zone 7 and hence minimize the size of the entire component.

公开(公告)号：JPH0918043A

公开(公告)日：1997-01-17

申请号：JP16747895

申请日：1995-07-03

Applicant: SHARP KK

Inventor： KIMURA TAKEYA

IPC: H01L31/042

Abstract: PROBLEM TO BE SOLVED: To provide solar batteries, which can make a series connection easily and hardly generate a failure, a solar battery module and the production method of the solar. SOLUTION: P electrodes, which are connected electrically with P impurity diffused layers formed on the rears of solar batteries 20, are respectively formed on the light-receiving surfaces of the batteries 20. Thereby, as the light-receiving surfaces can be connected with each other in the series connection of the batteries 20 using interconnectors 15 of the batteries 20, an automatization in the production process of a solar battery module is facilitated. Moreover, as a stress, which is applied to the batteries in the production process, can be lessened, a reduction in the thickness of a wafer is facilitated and the production cost of the module can be reduced. An insulating layer is formed at a prescribed position on the sides, which face the batteries 20, of the interconnectors 15.

公开(公告)号：JPH06140665A

公开(公告)日：1994-05-20

申请号：JP28601592

申请日：1992-10-23

Applicant: SHARP KK

Inventor： KIMURA TAKEYA ,  AKAI MITSUKUNI

IPC: G02B7/28 ,  H01L31/16

Abstract: PURPOSE:To strengthen each PSD to be resistive to noise so as to improve the accuracy in detection of position by equalizing the resistance between electrodes at both ends of each diode. CONSTITUTION:This patent relates to the improvement of a photodiode for detection of incident light point position, especially, multidivision type PSD for optical position measurement called a position sensor (PSD). That is, in the figure, the lengths L1 and L3 in the direction of positional detection of the light receiving faces of PSD1 and PSD3 at both ends are the same and are half the length L2 in the direction of the positional detection of the light receiving face of the PSD2 at the center. Moreover, the resistance between the electrodes of each PSD1-PSD3 can be made the same by adjusting the width and the length. For example, the width of the resistor 6 of PSD1 short in the direction of positional detection is made smaller than the width of the resistor 5 of PSD2 long in the direction of the positional detection. Accordingly, the resistance value of the PSD short in the direction of positional detection can be made large.

公开(公告)号：JPH04256377A

公开(公告)日：1992-09-11

申请号：JP1798291

申请日：1991-02-08

Applicant: SHARP KK

Inventor： KIMURA TAKEYA

IPC: H01L31/10 ,  H01L31/16

Abstract: PURPOSE:To realize high resistance of an impurity diffused layer for position detection of a two-dimensional position sensor and to remove interaction of signal of lengthwise and breadthwise directions. CONSTITUTION:A P-type impurity diffused layer 11 for position detection in breadthwise direction and a P-type impurity diffusion layer 15 for position detection in lengthwise direction are formed through an N-type epitaxial layer 12 to realize a double-layer structure.

公开(公告)号：JP2001223373A

公开(公告)日：2001-08-17

申请号：JP2000030413

申请日：2000-02-08

Applicant: SHARP KK

Inventor： KIMURA TAKEYA ,  NARUTOMI HIROKI

IPC: H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric conversion device whose generating efficiency is not lowered. SOLUTION: The photoelectric conversion device has a silicon substrate 1 having a light receiving surface, an n-type diffusion layer 5, and electrodes formed on the light receiving surface. Grooves 9 are formed on the light receiving surface. The electrodes include wiring-oriented electrodes having relatively wide widths to grid electrodes 72, and the grid electrodes 72 which have relatively narrow widths to the wiring-oriented electrodes and are connected electrically with the wiring-oriented electrodes. The grid electrodes 72 are formed in the regions wherein the grooves 9 are not formed.

公开(公告)号：JPH03262168A

公开(公告)日：1991-11-21

申请号：JP6085890

申请日：1990-03-12

Applicant: SHARP KK

Inventor： KIMURA TAKEYA ,  ASO AKIRA

IPC: H01L31/10

Abstract: PURPOSE:To decrease a series resistance of a photodetector so as to improve it in responsivity by a method wherein a contact section is provided along the long side of a P-type diffusion layer which serves as surface electrodes of the photodetectors provided to the inner side of the surface of an N-type semiconductor substrate, and a diffusion layer is provided along the inner circumference of peripheral photodetectors which surround the photodetectors so as to connect the P-type diffusion layer and the N-type substrate together. CONSTITUTION:Long contact sections 20, 20, 20, and 20 are provided onto the surface of inner photodetectors elements 2, 3, 4, and 5 along the long sides of P -type diffusion layers 13, 14, 15, and 16 and connected to Al electrode wirings 7, 8, 9, and 10 penetrating through an insulating film 12. An N -type diffusion region 19 is formed along the inner circumference of a P-type diffusion layer 17 on the surface of peripheral photodetectors 6 which surround the inner photodetectors 2, 3, 4, and 5. The N -type diffusion region 19 enables the P -type diffusion layer 17 to be short-circuited to the N layer of the semiconductor substrate 1 along the overall inner circumference of the peripheral photodetectors 6. A contact 19-1 is provided to a part of the N -type diffusion region 19 and wired to a cathode electrode 11 penetrating through the insulating film 12.

公开(公告)号：JPH03151211A

公开(公告)日：1991-06-27

申请号：JP29041489

申请日：1989-11-08

Applicant: SHARP KK

Inventor： KIMURA TAKEYA

IPC: B28D5/00

Abstract: PURPOSE:To prevent an advance of a crack by dispersing stress, by a method wherein a frame comprised of an oxide of a material of a wafer is provided on the surface of a part between an end of an effective part as a chip of each element and a dicing part and a difference in level is provided on an inner and outer surface of the frame. CONSTITUTION:Growth of the first SiO2 film 2, a removal and the second time growth after that of the SiO2 film 2 at the time of formation of P diffusion sphere 8 and the third time growth of the SiO2 film 2 and the removal of the SiO2 film 2 after that after formation of N type diffusion sphere 4 are performed on the surface 17 of a silicone base of a part 14 performing dicing. The growths of the SiO2 film are performed in three times on the upper part of the surface 16 of the silicone base of the lower part of a frame 13. Si is scraped off excessively from the surface 17 on the surface 19 of a part 15, from which the SiO2 film 2 of the upper part of the N type diffusion sphere 4 is removed. Stress with mechanical shock at the time of dicing is dispersed with a difference in level between an SiO2 frame 18 and the surface of the silicone base 1 formed like this and generation of a crack is prevented.