公开(公告)号：DE69500609D1

公开(公告)日：1997-10-02

申请号：DE69500609

申请日：1995-06-13

Applicant: SHARP KK

Inventor： KUBO MASARU ,  FUKUNAGA NAOKI ,  YAMAMOTO MOTOHIKO

IPC: H01L27/14 ,  H01L27/144 ,  H01L31/10

Abstract: A light receiving device including a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed on the semiconductor substrate of the first conductivity type; and a semiconductor layer of the first conductivity type which elongates from a surface of the first semiconductor substrate of the second conductivity type to reach a surface of the semiconductor substrate of the first conductivity type, the semiconductor layer splitting the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. The portion of the semiconductor layer of the first conductivity type which overlaps with the semiconductor substrate of the first conductivity type is formed as a semiconductor region of the first conductivity type and has a high-impurity density. The semiconductor regions of the second conductivity type, and semiconductor substrate of the first conductivity type below such regions form a plurality of light detecting photodiode portions for detecting signal light. The device further includes a second semiconductor layer of the second conductivity type being buried in a part of the semiconductor substrate of the first conductivity type which constitutes each of the light detecting photodiode portions.

公开(公告)号：DE69906923D1

公开(公告)日：2003-05-22

申请号：DE69906923

申请日：1999-12-27

Applicant: SHARP KK

Inventor： OHKUBO ISAMU ,  KUBO MASARU ,  FUKUNAGA NAOKI ,  TAKIMOTO TAKAHIRO ,  OKA MUTSUMI ,  KASAMATSU TOSHIMITSU

IPC: H01L31/10 ,  H01L27/144 ,  H01L31/103

Abstract: A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate (1) of a first conductivity type; a first semiconductor crystal growth layer (30) of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion (2) whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate (1) and a second portion (3) located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer (4) of the first conductivity type located in a second region which is above the first portion (2) of the first semiconductor crystal growth layer (30) and does not overlap the first region; a second semiconductor crystal growth layer (8) of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer (30) and a surface of the buried diffusion layer (4); and a separation diffusion region (7,9) having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section (80) and a signal processing circuit section (90). The first region is located in the light-receiving device section (80). In the signal processing circuit section (90), the buried diffusion layer (4) is in contact with the first portion (2) of the first semiconductor crystal growth layer (30).

公开(公告)号：DE69408707T2

公开(公告)日：1998-09-10

申请号：DE69408707

申请日：1994-04-19

Applicant: SHARP KK

Inventor： YAMAMOTO MOTOHIKO ,  KUBO MASARU

IPC: H01L21/761 ,  C04B20/10 ,  H01L27/144 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/10 ,  H01L27/146

公开(公告)号：DE69632893T2

公开(公告)日：2005-07-14

申请号：DE69632893

申请日：1996-07-23

Applicant: SHARP KK

Inventor： YAMAMOTO MOTOHIKO ,  KUBO MASARU

IPC: H01L27/146 ,  H01L27/14 ,  H01L27/15 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/10 ,  H01L31/103 ,  H01L31/173 ,  H01L31/18 ,  H01S5/00 ,  H01L31/02 ,  H01L27/144

Abstract: Si3N4 having high humidity resistance is used as a surface protecting insulating film (12) covering a metal layer (9). At a bonding pad portion (21) where metal layer (9) is directly exposed, coverage is provided by anti-corrosion metal portion consisting of a titanium-tungsten alloy layer (13) and gold layers (14a, 14b). At a signal processing circuit portion (23), light intercepting structure and interconnection are provided similarly by titanium-tungsten alloy layer (13) and gold layer (14). Thus humidity resistance of a photodetector element containing a circuit element is improved, and the gold layer (14) allows direct die-bonding of a laser chip or the like. Further, since light intercepting structure and interconnection can be provided at the signal processing circuit portion (23) simultaneously with the formation of gold layer (14) for the bonding pad portion (21), the number of manufacturing steps can be reduced.

公开(公告)号：DE69500609T2

公开(公告)日：1998-03-26

申请号：DE69500609

申请日：1995-06-13

Applicant: SHARP KK

Inventor： KUBO MASARU ,  FUKUNAGA NAOKI ,  YAMAMOTO MOTOHIKO

IPC: H01L27/14 ,  H01L27/144 ,  H01L31/10

Abstract: A light receiving device including a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed on the semiconductor substrate of the first conductivity type; and a semiconductor layer of the first conductivity type which elongates from a surface of the first semiconductor substrate of the second conductivity type to reach a surface of the semiconductor substrate of the first conductivity type, the semiconductor layer splitting the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. The portion of the semiconductor layer of the first conductivity type which overlaps with the semiconductor substrate of the first conductivity type is formed as a semiconductor region of the first conductivity type and has a high-impurity density. The semiconductor regions of the second conductivity type, and semiconductor substrate of the first conductivity type below such regions form a plurality of light detecting photodiode portions for detecting signal light. The device further includes a second semiconductor layer of the second conductivity type being buried in a part of the semiconductor substrate of the first conductivity type which constitutes each of the light detecting photodiode portions.

公开(公告)号：EP0766323A3

公开(公告)日：1998-07-29

申请号：EP96115390

申请日：1996-09-25

Applicant: SHARP KK

Inventor： FUKUNAGA NAOKI ,  KUBO MASARU

IPC: H01L27/146 ,  H01L27/14 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/103 ,  H01L27/1446 ,  H01L31/035281 ,  H01L31/1876 ,  Y02E10/50

Abstract: The light-receiving element of the invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed in a predetermined region on a surface of the semiconductor substrate of the first conductivity type; and at least one semiconductor region of the first conductivity type which is formed so as to extend from an upper surface of the first semiconductor layer of the second conductivity type to the surface of the semiconductor substrate of the first conductivity type, thereby dividing the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. In the light-receiving element, a specific resistance of the semiconductor substrate of the first conductivity type is set in a predetermined range such that a condition Xd ≥ Xj is satisfied between a depth Xd of a depletion layer to be formed in the semiconductor substrate of the first conductivity type upon an application of an inverse bias and a diffusion depth Xj of the semiconductor region of the first conductivity type into the semiconductor substrate of the first conductivity type.

Abstract translation: 本发明的光接收元件包括：第一导电类型的半导体衬底; 第一导电类型的第一半导体层，其形成在第一导电类型的半导体衬底的表面上的预定区域中; 以及形成为从第二导电类型的第一半导体层的上表面延伸到第一导电类型的半导体衬底的表面的第一导电类型的至少一个半导体区域，从而将第一半导体 第二导电类型的层形成为第二导电类型的多个半导体区域。 在光接收元件中，将第一导电类型的半导体衬底的比电阻设定在预定范围内，使得在半导体衬底中要形成的耗尽层的深度Xd满足条件Xd≥Xj 在第一导电类型的半导体衬底中施加反向偏置和第一导电类型的半导体区域的扩散深度Xj的第一导电类型。

公开(公告)号：EP0756333A3

公开(公告)日：1998-06-10

申请号：EP96111862

申请日：1996-07-23

Applicant: SHARP KK

Inventor： YAMAMOTO MOTOHIKO ,  KUBO MASARU

IPC: H01L27/146 ,  H01L27/14 ,  H01L27/15 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/10 ,  H01L31/103 ,  H01L31/173 ,  H01L31/18 ,  H01S5/00 ,  H01L31/02

CPC classification number: H01L31/103 ,  H01L31/02165 ,  H01L31/173 ,  H01L31/18

Abstract: Si
3 N
4 having high humidity resistance is used as a surface protecting insulating film (12) covering a metal layer (9). At a bonding pad portion (21) where metal layer (9) is directly exposed, coverage is provided by anti-corrosion metal portion consisting of a titanium-tungsten alloy layer (13) and gold layers (14a, 14b). At a signal processing circuit portion (23), light intercepting structure and interconnection are provided similarly by titanium-tungsten alloy layer (13) and gold layer (14). Thus humidity resistance of a photodetector element containing a circuit element is improved, and the gold layer (14) allows direct die-bonding of a laser chip or the like. Further, since light intercepting structure and interconnection can be provided at the signal processing circuit portion (23) simultaneously with the formation of gold layer (14) for the bonding pad portion (21), the number of manufacturing steps can be reduced.

Abstract translation: 使用具有高耐湿性的Si 3 N 4作为覆盖金属层（9）的表面保护绝缘膜（12）。 在金属层（9）直接暴露的接合焊盘部分（21）处，由钛 - 钨合金层（13）和金层（14a，14b）组成的防腐金属部分提供覆盖。 在信号处理电路部分（23）处，类似地由钛 - 钨合金层（13）和金层（14）提供遮光结构和互连。 因此，含有电路元件的光电检测元件的耐湿性得到改善，并且金层（14）允许激光芯片等的直接芯片接合。 此外，由于可以在形成用于接合焊盘部分（21）的金层（14）的同时在信号处理电路部分（23）处提供遮光结构和互连，所以可以减少制造步骤的数量。

公开(公告)号：DE69632893D1

公开(公告)日：2004-08-19

申请号：DE69632893

申请日：1996-07-23

Applicant: SHARP KK

Inventor： YAMAMOTO MOTOHIKO ,  KUBO MASARU

IPC: H01L27/146 ,  H01L27/14 ,  H01L27/15 ,  H01L31/0216 ,  H01L31/04 ,  H01L31/10 ,  H01L31/103 ,  H01L31/173 ,  H01L31/18 ,  H01S5/00 ,  H01L31/02 ,  H01L27/144

Abstract: Si3N4 having high humidity resistance is used as a surface protecting insulating film (12) covering a metal layer (9). At a bonding pad portion (21) where metal layer (9) is directly exposed, coverage is provided by anti-corrosion metal portion consisting of a titanium-tungsten alloy layer (13) and gold layers (14a, 14b). At a signal processing circuit portion (23), light intercepting structure and interconnection are provided similarly by titanium-tungsten alloy layer (13) and gold layer (14). Thus humidity resistance of a photodetector element containing a circuit element is improved, and the gold layer (14) allows direct die-bonding of a laser chip or the like. Further, since light intercepting structure and interconnection can be provided at the signal processing circuit portion (23) simultaneously with the formation of gold layer (14) for the bonding pad portion (21), the number of manufacturing steps can be reduced.

公开(公告)号：DE69906923T2

公开(公告)日：2004-02-26

申请号：DE69906923

申请日：1999-12-27

Applicant: SHARP KK

Inventor： OHKUBO ISAMU ,  KUBO MASARU ,  FUKUNAGA NAOKI ,  TAKIMOTO TAKAHIRO ,  OKA MUTSUMI ,  KASAMATSU TOSHIMITSU

IPC: H01L31/10 ,  H01L27/144 ,  H01L31/103

Abstract: A circuit-integrated light-receiving device of the present invention includes: a semiconductor substrate (1) of a first conductivity type; a first semiconductor crystal growth layer (30) of the first conductivity type provided on a surface of the semiconductor substrate, wherein the first semiconductor crystal growth layer includes a first portion (2) whose impurity concentration gradually decreases in a direction away from the surface of the semiconductor substrate (1) and a second portion (3) located in a first region above the first portion whose impurity concentration distribution is uniform in a depth direction; a buried diffusion layer (4) of the first conductivity type located in a second region which is above the first portion (2) of the first semiconductor crystal growth layer (30) and does not overlap the first region; a second semiconductor crystal growth layer (8) of a second conductivity type which is provided across a surface of the first semiconductor crystal growth layer (30) and a surface of the buried diffusion layer (4); and a separation diffusion region (7,9) having the first conductivity type for dividing the second semiconductor crystal growth layer into a light-receiving device section (80) and a signal processing circuit section (90). The first region is located in the light-receiving device section (80). In the signal processing circuit section (90), the buried diffusion layer (4) is in contact with the first portion (2) of the first semiconductor crystal growth layer (30).

公开(公告)号：HK1012867A1

公开(公告)日：1999-08-13

申请号：HK98114133

申请日：1998-12-21

Applicant: SHARP KK

Inventor： TAKIMOTO TAKAHIRO ,  FUKUNAGA NAOKI ,  KUBO MASARU

IPC: H01L27/14 ,  H01L27/144 ,  H01L31/02 ,  H01L31/10 ,  H01L

Abstract: The circuit-integrating light-receiving element of this invention includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type formed over the semiconductor substrate; a first semiconductor layer of the first conductivity type for dividing the first semiconductor layer into semiconductor regions of the second conductivity type; light-detecting sections being constituted by the divided semiconductor regions and underlying regions of the semiconductor substrate, a divided photodiode being composed of the light-detecting sections; a second semiconductor layer of the second conductivity type formed only in the vicinity of the first semiconductor layer of the first conductivity type functioning as a division section of the divided photodiode and within the regions of the semiconductor substrate forming the respective light-detecting sections; and a second semiconductor layer of the first conductivity type formed in a surface region of the first semiconductor layer of the second conductivity type including the division section so as to cover an upper part of the second semiconductor layer of the second conductivity type.