公开(公告)号：DE2702448A1

公开(公告)日：1978-07-27

申请号：DE2702448

申请日：1977-01-20

Applicant: SIEMENS AG

Inventor： FROSIEN JUERGEN DIPL ING

IPC: H01J37/305 ,  G01R17/00 ,  H01J37/304 ,  H01L21/027 ,  H03F1/30 ,  H01L21/68 ,  H05K3/06 ,  H01L21/82

Abstract: An improved method for positioning a workpiece having at least one marking in a charged-particle beam apparatus relative to either a scanning field or a mask and in which a scanning beam linearly scans the workpiece and a signal is generated by the scanning and controls a writing beam which travels across the screen of a display means. The improvement of the invention comprises the step of scanning the workpiece with the scanning beam successively in opposite directions at the same velocity. The writing beam travels across the screen of the display means in response to the scanning in the same direction once for each scan of the workpiece by the scanning beam in a definite phase relationship to the scanning beam. The scanning of the workpiece generates two signals in response thereto and the positions of the two signals, which are displayed on the display means, are adjusted so that the signals are brought into coincidence.

公开(公告)号：DE3010814A1

公开(公告)日：1981-09-24

申请号：DE3010814

申请日：1980-03-20

Applicant: SIEMENS AG

Inventor： ANGER KLAUS DIPL ING ,  FROSIEN JUERGEN DIPL ING ,  LISCHKE BURKHARD PROF DR ,  PLIES ERICH DR ,  TONAR KLAUS DIPL ING

IPC: H01J3/20 ,  H01J37/30 ,  H01J37/317 ,  H01J3/26 ,  H01J37/14 ,  H01J37/147 ,  H01L21/70

Abstract: The multiple path lens for focusing a number of parallel beams of radiation for an electron beam writing device for forming a number of identical patterns on a semiconductor wafer in the production of integrated circuit clips, consists of two parallel perforated magnetic plates (1,2). The holes through the plates are in line and the plates can be permanent magnets. They can be of ferromagnetic material and form part of a large magnetic lens (10) with a winding (11) enclosed by an iron casing (12). The magnetisation can be varied by altering the current flow through the winding. In another design, one plate is stopped, having holes of different lengths through it, the spacing between some of the holes in the upper plate and those in the lower plate varying to give a variable magnetic force for correct forcusing. The writing device may use a hybrid lens with the radiation source near its front face, below a condenser lens and a deflection system.

公开(公告)号：DE2727606A1

公开(公告)日：1979-01-04

申请号：DE2727606

申请日：1977-06-20

Applicant: SIEMENS AG

Inventor： SCHUSTER-WOLDAN HANS DR ,  LISCHKE BURKHARD DR ,  FROSIEN JUERGEN DIPL ING

IPC: H01J37/30 ,  H01L21/027 ,  H01L21/26

Abstract: The imaging uses an electron-optical technique and a mask with a support grid which carries partial surfaces opaque to the electron beam, forming the surface pattern. The mask image on the wafer is shifted in two coordinate directions at right angles or parallel to the grid structure. The support grid of the mask is formed by coordinate strips whose width is so rated as to correspond to a half of the grid constants. The opaque surfaces of the pattern are provided on the grid in such a manner that their edges abut the corresponding edges of the strips. An aperture of the grid, image on the wafer is subsequently shifted in each of the four corner points of the image aperture, in order to shift the image of the surface centre point. A light exposure follows each of the four image shifts.

公开(公告)号：DE3010815A1

公开(公告)日：1981-09-24

申请号：DE3010815

申请日：1980-03-20

Applicant: SIEMENS AG

Inventor： ANGER KLAUS DIPL ING ,  FROSIEN JUERGEN DIPL ING ,  LISCHKE BURKHARD PROF DR ,  PLIES ERICH DR ,  TONAR KLAUS DIPL ING

IPC: H01J37/063 ,  H01J37/06 ,  H01J37/153 ,  H01L21/027 ,  H01J49/08

Abstract: A high current electron source with a narrow energy band of the type employed in an electron beam printer has a beam generating system consisting of a cathode and focusing electrodes and an anode with at least one electrode functioning to astigmatically focus at least one electron crossover in the low velocity range. For varying the position and shape of the crossover in a simple manner for adaptation to particular use conditions of the high current electron source, the Wehnelt electrode of the electron source consists of one or more cylinder lenses or of an electrostatic multipole element, or an electromagnetic multipole element is disposed in the plane of a conventional non-ferromagnetic Wehnelt electrode with a circular aperture for the electron beam. By pole reversal of the Wehnelt voltage or of the coil current and by changing the size of the current, the shape and azimuth position of the first crossover in the cathode space can be varied to any configuration. By so doing, an energy spread of the electrons is prevented and an optimum illumination of surfaces to be imaged is achieved.

公开(公告)号：DE2726173A1

公开(公告)日：1978-12-14

申请号：DE2726173

申请日：1977-06-08

Applicant: SIEMENS AG

Inventor： FROSIEN JUERGEN DIPL ING ,  RESCHKE HELMUT ING GRAD

IPC: G03F9/00 ,  H01J37/304 ,  H01L21/027 ,  H01L21/68

Abstract: A method for automatically positioning a workpiece having at least one marking, specifically a wafer for integrated circuits which is to be processed in a charged-particle beam apparatus, relative to a scanning field or mask. In the method, a scanning beam scans the workpiece along the line and a marking signal is generated when the marking is reached by the beam. This marking signal controls a device which generates a control signal in response to the marking signal which is proportional to the deviation of the marking position from a reference position and which drives a device for correcting the position of the workpiece relative to the scanning field or mask. The improvement of the invention comprises the steps of scanning the beam across the workpiece successively in opposite directions at the same velocity through a forward sweep and a return sweep of the beam; integrating a positive reference voltage in an integrator during the forward sweep of the beam from the beginning of the line scanned until the marking on the workpiece is reached by the beam; integrating a negative reference voltage having the same magnitude as the positive reference voltage in the integrator during the return sweep of the beam from the end of the line scanned by the beam until the marking on the workpiece is reached by the beam; and generating an output control signal by means of the integrator after a full forward and return sweep of the scanning beam over the workpiece for correcting the position of the workpiece relative to the scanning field or mask. A method using digital scanning and apparatus for carrying out the methods are also disclosed.

公开(公告)号：DE2702444A1

公开(公告)日：1978-07-27

申请号：DE2702444

申请日：1977-01-20

Applicant: SIEMENS AG

Inventor： LISCHKE BURKHARD DR ING ,  OELMANN ANDREAS DR ING ,  FROSIEN JUERGEN DIPL ING

IPC: H01L21/027 ,  H01J37/30 ,  H01J37/304 ,  H01L21/26 ,  H01L21/82 ,  H01J37/28 ,  H01J3/10

Abstract: An improved charged-particle beam optical apparatus for imaging a first mask including a plurality of apertures on a specimen to be irradiated. The mask is uniformly illuminated by a beam through a plurality of condenser lenses and the apparatus includes means for adjusting the position of the mask relative to the specimen. A selected area of the specimen has an adjustment marking disposed thereon which is illuminated by a ray of charged particles from the beam passing through a test opening provided in the mask. The apparatus further includes means for detecting radiation emanating from the specimen. The improvement of the invention comprises the provision of a second mask, having at least one aperture which is alignable with the test opening in the first mask, mounted in the apparatus and movable into positions above and below the first mask for aligning the test opening and aperture in the first and second masks and covering the plurality of apertures in the first mask so as to permit charged particles from the beam to pass only through the test opening in the first mask and the aperture in the second mask.

公开(公告)号：DE2927242A1

公开(公告)日：1981-01-08

申请号：DE2927242

申请日：1979-07-05

Applicant: SIEMENS AG

Inventor： FROSIEN JUERGEN DIPL ING

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/31 ,  H01L21/263

Abstract: The corpuscular or X-ray lithographic process for semiconductor bodies coated with a lacquer applies the radiation for controlled intervals of time. A first dose of radiation can be applied evenly over the resist, then a second dose is applied to obtain the required structure. The even dosage is applied integrally, and electrons can be used for the second dosage. The first dosage can be up to 30 percent of the overall dosage. A different type of radiation is used for one dosage than that used for the other, and the resist must correspond to both types.

公开(公告)号：DE2719801A1

公开(公告)日：1978-11-02

申请号：DE2719801

申请日：1977-04-28

Applicant: SIEMENS AG

Inventor： FROSIEN JUERGEN DIPL ING ,  LISCHKE BURKHARD DR ING

IPC: H01J37/304 ,  H01J37/30 ,  H01J37/28

Abstract: The unit has a device for positioning the specimen with respect to a projection mask or the corpuscular beam. The specimen has a positioning mask in the form of a recess. The beam is focussed on the specimen and scans it in lines, moved by a deflection system. The specimen position is determined by the current generated by the corpuscular beam striking the specimen, or by a secondary emission of electrons caused by it. The positioning mark consists of closely adjacent double or multiple grooves (9), or corresponding ribs, whose spacing is smaller than or equal to the range of corpuscules striking the specimen (6).

公开(公告)号：DE2719800A1

公开(公告)日：1978-11-02

申请号：DE2719800

申请日：1977-04-28

Applicant: SIEMENS AG

Inventor： FROSIEN JUERGEN DIPL ING ,  LISCHKE BURKHARD DR ING ,  OELMANN ANDREAS DR ING

IPC: H01J37/30 ,  H01J37/304 ,  H01J37/28

Abstract: The unit projects on a specimen to be irradiated a mask uniformly illuminated by a corpuscular beam such as an electron beam focussed by a condenser lens. The specimen area with a positioning mark is irradiated by an electron beam. It passes through a positioning hole in the mask, and is deflected in a scanning pattern by a deflection device above the mark. A signal coming from the specimen is applied to a monitor for a picture generation. The positioning hole (4a) consists of a preadjustment capture zone which can be mechanically reached without observation of a picture, and of a fine positioning zone. Both zones have edges which are opaque to the corpuscular beam.

公开(公告)号：DE2719799A1

公开(公告)日：1978-11-02

申请号：DE2719799

申请日：1977-04-28

Applicant: SIEMENS AG

Inventor： FROSIEN JUERGEN DIPL ING

IPC: H01J37/317 ,  H01L21/027 ,  H01J39/16 ,  H01J37/30

Abstract: The photoelectronic image projector is used for forming a mask on a semiconductor wafer. It uses an electric acceleration field directed at right angles to a photocathode and the wafer. The mask (6) forms the positive electrode of the acceleration field and is mounted in spaced manner and parallel to the photocathode (3) between the same and the wafer. The mask (6) consists of a support grid and of structure increased by the grid width. The acceleration voltage and the distance of the mask from the wafer meet a specified relation, concerned with a tangential component of velocity of electrons emitted from the photocathode. Typically the mask has a positive potential of the order of 10V in relation to the wafer.