公开(公告)号：US20030146478A1

公开(公告)日：2003-08-07

申请号：US10382842

申请日：2003-03-07

Applicant: SILICON INTEGRATED SYSTEMS CORP.

Inventor： Wen Ping Yen ,  Yun Hsiu Chen ,  Hung-Cheng Weng

IPC: H01L029/76 ,  H01L031/062 ,  H01L021/8234

CPC classification number: H01L29/51 ,  H01L21/28114 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/823462 ,  H01L29/42376 ,  H01L29/511 ,  H01L29/513

Abstract: A MOS device with dual gate insulators has a first gate insulator formed on a predetermined area of a semiconductor substrate, and a second gate insulator formed outside the predetermined area of the semiconductor substrate to surround the first gate insulator. The second gate insulator is thicker than the first gate insulator. In addition, a gate electrode layer is patterned on the dual gate insulators. The bottom center of the gate electrode layer covers the first gate insulator, and the bottom edge of the gate electrode layer extends to cover the second gate insulator.