公开(公告)号：US20160284745A1

公开(公告)日：2016-09-29

申请号：US15022877

申请日：2014-08-22

Applicant: SILICONFILE TECHNOLOGIES, INC.

Inventor： Jae-Young PARK ,  Ho-Soo KIM

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645

Abstract: The present invention relates to an image sensor chip of which the efficiency such as sensitivity/quantum efficiency (QE) and the like can be improved by forming an antireflection film on a layer from which most reflection occurs in the image sensor chip, and image degradation can be additionally improved by preventing a ghost phenomenon and a flare phenomenon.

Abstract translation: 本发明涉及通过在图像传感器芯片中发生大多数反射的层上形成抗反射膜而提高其灵敏度/量子效率（QE）等效率的图像传感器芯片，以及图像劣化 可以通过防止重影现象和闪光现象来另外改进。