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公开(公告)号:US11487429B1
公开(公告)日:2022-11-01
申请号:US17321541
申请日:2021-05-17
Applicant: SOLID STATE STORAGE TECHNOLOGY CORPORATION
Inventor: Liang-You Lin , Ho-An Lin , Chun-Ju Chiu
IPC: G06F3/06
Abstract: A FTL table processing method for a solid state drive is provided. When the control circuit intends to perform the backup action on a FTL table, the control circuit calculates the size of a remaining space of a used block. Then, the control circuit judges whether the complete content of the FTL table is required to be backed up to the blank block. If the size of the remaining space of the used block is enough, the control circuit backs up the amended contents of the FTL table and a content changed table to the remaining space of the used block. Whereas, if the size of the remaining space of the used block is not enough, the control circuit backs up the complete content of the FTL table to a plurality of blank blocks.
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公开(公告)号:US12099410B2
公开(公告)日:2024-09-24
申请号:US18144995
申请日:2023-05-09
Applicant: SOLID STATE STORAGE TECHNOLOGY CORPORATION
Inventor: Liang-You Lin , Ya-Ping Pan , Po-Lin Liu , Chang-Chun Zheng
CPC classification number: G06F11/1068 , G06F11/3034 , G06F11/3058
Abstract: A using method of a statistics table in a solid state storage device is provided. When the solid state storage device is powered on, the statistics table is loaded from a non-volatile memory into a volatile memory. A content of the statistics table contains plural ranges. The plural ranges respectively correspond to plural counting values. If an update cycle is reached, the statistics table is updated according to a sensed value. A first sum value is calculated according to the plural counting values corresponding to the plural ranges in the statistics table. The timing of enabling a data verification process for the non-volatile memory is determined according to the first sum value and a first threshold value.
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公开(公告)号:US11899976B2
公开(公告)日:2024-02-13
申请号:US17678067
申请日:2022-02-23
Applicant: SOLID STATE STORAGE TECHNOLOGY CORPORATION
Inventor: Liang-You Lin , Yu-Chuan Peng , Ya-Ping Pan , Po-Yen Chen
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0604 , G06F3/0679
Abstract: A solid state storage device includes a control circuit, a volatile memory and a non-volatile memory. The non-volatile memory is divided into a first area and a second area. After the host issues a write command and a write data, the control circuit monitors a data amount of the write data continuously stored into the non-volatile memory. Before the data amount of the write data continuously stored into the non-volatile memory reaches a predetermined amount, the write data is stored into plural buffering blocks of the first area in a first write mode. After the data amount of the write data continuously stored into the non-volatile memory reaches the predetermined amount, the write data is stored into plural storing blocks of the second area in a second write mode.
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