公开(公告)号：AU1499700A

公开(公告)日：2000-08-24

申请号：AU1499700

申请日：2000-02-09

Applicant: SONY CORP

Inventor： KASAMI YUTAKA ,  SEO KATSUHIRO ,  KAWAKUBO OSAMU

IPC: G11B7/0045 ,  G11B7/006 ,  G11B7/24 ,  G11B7/254 ,  G11B7/257 ,  G11B7/258 ,  G11B7/30

Abstract: A phase change optical recording medium which enables optimum direct overwrite even under high speed high density conditions without degrading repetition durability or storage stability of recorded signals. To this end, the phase change optical recording medium has a recording layer formed at least of a phase change material and is recorded and/or reproduced with a laser light beam having a wavelength ranging between 380 nm and 420 nm. A ratio Ac/Aa, where Ac is the absorption rate of said recording layer in a crystalline state and Aa is the absorption rate of said recording layer in an amorphous state, is not less than 0.9, and a crystallization promoting layer promoting the crystallization of the phase change material is contacted with at least one surface of the recording layer. By exploiting the absorption rate control and the crystallization promotion in combination, it is possible to positively compensate the difference between the physical properties of the crystal phase and those of the amorphous phase to realize optimum direct overwrite.

公开(公告)号：ID26445A

公开(公告)日：2001-01-04

申请号：ID20000124

申请日：2000-02-17

Applicant: SONY CORP

Inventor： KASAMI YUTAKA ,  KAWAKUBO OSAMU ,  SEO KATSUHIRO

IPC: G11B7/0045 ,  G11B7/0055 ,  G11B7/006 ,  G11B7/125 ,  G11B7/24 ,  G11B7/243 ,  G11B7/253 ,  G11B7/2534 ,  G11B7/254 ,  G11B7/2542 ,  G11B7/257 ,  G11B7/258 ,  G11B7/2585 ,  G11B7/259 ,  G11B7/2595 ,  G11B7/00

Abstract: A phase change optical recording medium which enables optimum direct overwrite even under high speed high density conditions without degrading repetition durability or storage stability of recorded signals. To this end, the phase change optical recording medium has a recording layer (2) formed at least of a phase change material and is recorded and/or reproduced with a laser light beam having a wavelength ranging between 380 nm and 420 nm. A ratio Ac/Aa, where Ac is the absorption rate of said recording layer in a crystalline state and Aa is the absorption rate of said recording layer (2) in an amorphous state, is not less than 0.9, and a crystallization promoting layer (3,4) promoting the crystallization of the phase change material is contacted with at least one surface of the recording layer (2). By exploiting the absorption rate control and the crystallization promotion in combination, it is possible to positively compensate the difference between the physical properties of the crystal phase and those of the amorphous phase to realize optimum direct overwrite.

公开(公告)号：MXPA00001574A

公开(公告)日：2007-06-29

申请号：MXPA00001574

申请日：2000-02-15

Applicant: SONY CORP

Inventor： KASAMI YUTAKA ,  KAWAKUBO OSAMU

IPC: G11B7/25 ,  G11B7/0045 ,  G11B7/006 ,  G11B7/24 ,  G11B7/254 ,  G11B7/257 ,  G11B7/258

Abstract: Un medio de registro optico de cambio de fase que permite la sobreescritura directa optima aun bajo condiciones de densidad y alta velocidad sin degradar la durabilidad de repeticion o la estabilidad de almacenamiento de las senales registradas. Para este fin, el medio de registro optico de cambio de fase tiene una capa de registro formada por lo menos de un material de cambio de fase y se registra y/o reproduce con un haz de luz laser que tiene una longitud de onda que varia entre 380 nanometros y 420 nanometros. Una relacion de Ac/Aa, en donde Ac es el regimen de absorcion de la capa de registro en un estado cristalino y Aa es el regimen de absorcion de la capa de registro en un estado amorfo, es no menor de 0.9, y una capa promotora de cristalizacion promueve la cristalizacion del material de cambio de fase en contacto con por lo menos una superficie de la capa de registro. Explotando el control del regimen de absorcion y la promocion de cristalizacion en combinacion, es posible compensar de manera positiva la diferencia entre las propiedades fisicas de la fase de cristal y aquellas de la fase amorfa para obtener una sobreescritura directa optima.

公开(公告)号：BR0000895A

公开(公告)日：2000-09-12

申请号：BR0000895

申请日：2000-02-21

Applicant: SONY CORP

Inventor： KASAMI YUTAKA ,  KAWAKUBO OSAMU ,  SEO KATSUHIRO

IPC: G11B7/0045 ,  G11B7/006 ,  G11B7/24 ,  G11B7/254 ,  G11B7/257 ,  G11B7/258 ,  G11B7/30

Abstract: A phase change optical recording medium which enables optimum direct overwrite even under high speed high density conditions without degrading repetition durability or storage stability of recorded signals. To this end, the phase change optical recording medium has a recording layer formed at least of a phase change material and is recorded and/or reproduced with a laser light beam having a wavelength ranging between 380 nm and 420 nm. A ratio Ac/Aa, where Ac is the absorption rate of said recording layer in a crystalline state and Aa is the absorption rate of said recording layer in an amorphous state, is not less than 0.9, and a crystallization promoting layer promoting the crystallization of the phase change material is contacted with at least one surface of the recording layer. By exploiting the absorption rate control and the crystallization promotion in combination, it is possible to positively compensate the difference between the physical properties of the crystal phase and those of the amorphous phase to realize optimum direct overwrite.

公开(公告)号：CA2298456C

公开(公告)日：2009-10-20

申请号：CA2298456

申请日：2000-02-16

Applicant: SONY CORP

Inventor： KASAMI YUTAKA ,  KAWAKUBO OSAMU ,  SEO KATSUHIRO

IPC: G11B7/24 ,  G11B7/0045 ,  G11B7/0055 ,  G11B7/006 ,  G11B7/125 ,  G11B7/243 ,  G11B7/253 ,  G11B7/2534 ,  G11B7/254 ,  G11B7/2542 ,  G11B7/257 ,  G11B7/258 ,  G11B7/2585 ,  G11B7/259 ,  G11B7/2595

Abstract: A phase change optical recording medium which enables optimum direct overwrite even under high speed high density conditions without degrading repetition durability or storage stability of recorded signals. To this end, the phase change optical recording medium has a recording layer formed at least of a phase change material and is recorded and/or reproduced with a laser light beam having a wavelength ranging between 380 nm and 420 nm. A ratio Ac/Aa, where Ac is the absorption rate of said recording layer in a crystalline state and Aa is the absorption rate of said recording layer in an amorphous state, is not less than 0.9, an d a crystallization promoting layer promoting the crystallization of the phase change material is contacted with at least one surface of the recording layer. By exploiting the absorption rate control and the crystallization promotion in combination, it is possible to positively compensate the difference between the physical properties of t he crystal phase and those of the amorphous phase to realize optimum direct overwrite.

公开(公告)号：AU758976B2

公开(公告)日：2003-04-03

申请号：AU1499700

申请日：2000-02-09

Applicant: SONY CORP

Inventor： KASAMI YUTAKA ,  KAWAKUBO OSAMU ,  SEO KATSUHIRO

IPC: G11B7/0045 ,  G11B7/006 ,  G11B7/24 ,  G11B7/254 ,  G11B7/257 ,  G11B7/258 ,  G11B7/30

Abstract: A phase change optical recording medium which enables optimum direct overwrite even under high speed high density conditions without degrading repetition durability or storage stability of recorded signals. To this end, the phase change optical recording medium has a recording layer formed at least of a phase change material and is recorded and/or reproduced with a laser light beam having a wavelength ranging between 380 nm and 420 nm. A ratio Ac/Aa, where Ac is the absorption rate of said recording layer in a crystalline state and Aa is the absorption rate of said recording layer in an amorphous state, is not less than 0.9, and a crystallization promoting layer promoting the crystallization of the phase change material is contacted with at least one surface of the recording layer. By exploiting the absorption rate control and the crystallization promotion in combination, it is possible to positively compensate the difference between the physical properties of the crystal phase and those of the amorphous phase to realize optimum direct overwrite.

公开(公告)号：CA2298456A1

公开(公告)日：2000-12-30

申请号：CA2298456

申请日：2000-02-16

Applicant: SONY CORP

Inventor： KASAMI YUTAKA ,  KAWAKUBO OSAMU ,  SEO KATSUHIRO

IPC: G11B7/0045 ,  G11B7/0055 ,  G11B7/006 ,  G11B7/125 ,  G11B7/24 ,  G11B7/243 ,  G11B7/253 ,  G11B7/2534 ,  G11B7/254 ,  G11B7/2542 ,  G11B7/257 ,  G11B7/258 ,  G11B7/2585 ,  G11B7/259 ,  G11B7/2595

Abstract: A phase change optical recording medium which enables optimum direct overwrite even under high speed high density conditions without degrading repetition durability or storage stability of recorded signals. To this end, the phase change optical recording medium has a recording layer formed at least of a phase change material and is recorded and/or reproduced with a laser light beam having a wavelength ranging between 380 nm and 420 nm. A ratio Ac/Aa, where Ac is the absorption rate of said recording layer in a crystalline state and Aa is the absorption rate of said recording layer in an amorphous state, is not less than 0.9, and a crystallization promoting layer promoting the crystallization of the phase change material is contacted with at least one surface of the recording layer. By exploiting the absorption rate control and the crystallization promotion in combination, it is possible to positively compensate the difference between the physical properties of the crystal phase and those of the amorphous phase to realize optimum direct overwrite.

公开(公告)号：EP3029620A4

公开(公告)日：2017-04-12

申请号：EP14831723

申请日：2014-07-22

Applicant: SONY CORP

Inventor： YAMAMOTO NORIYUKI ,  KASAMI YUTAKA ,  TAKAMURA SEIICHI ,  ASANO YASUHARU ,  SEKINO MASASHI

IPC: G06Q30/02 ,  G06F13/00 ,  G06F17/30 ,  G06Q50/10

CPC classification number: G06Q10/02 ,  G06F17/30867 ,  G06Q30/02 ,  G06Q30/0631 ,  G06Q50/10 ,  G06Q50/14

公开(公告)号：EP0984443A4

公开(公告)日：2002-10-30

申请号：EP99906469

申请日：1999-02-24

Applicant: SONY CORP

Inventor： KURODA YUJI ,  KASAMI YUTAKA

IPC: G11B7/24035 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B7/258 ,  G11B7/2585 ,  G11B7/259 ,  G11B7/2595

CPC classification number: G11B7/243 ,  G11B7/24 ,  G11B7/257 ,  G11B7/2585 ,  G11B7/259 ,  G11B7/2595 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25711 ,  G11B2007/25713 ,  Y10T428/21

公开(公告)号：DE69928190T2

公开(公告)日：2006-07-27

申请号：DE69928190

申请日：1999-02-24

Applicant: SONY CORP

Inventor： KURODA YUJI ,  KASAMI YUTAKA

IPC: G11B7/24035 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B7/258 ,  G11B7/2585 ,  G11B7/259 ,  G11B7/2595

Abstract: An optical recording medium having a recording layer made of a phase-transition material. The ratio (Ac/Aa) of the absorption factor (Ac) of when the recording layer is in a crystalline phase to the absorption factor (Aa) of when it is in an amorphous phase is 0.9 or over. A crystallization-promoting layer for promoting crystallization of the phase-transition material is formed in contact with at least one of the sides of the recording layer. Control of absorption factor and promotion of crystallization are both achieved, so that the differences of physical properties of crystalline and amorphous phases are properly compensated, and good direct overwrite is realized even under high-speed and high-density condition.