公开(公告)号：JP2001099791A

公开(公告)日：2001-04-13

申请号：JP28200899

申请日：1999-10-01

Applicant: SONY CORP

Inventor： KUDO YOSHIHIRO ,  RYU KOSUKE ,  KAWATO SEIJI

IPC: G01B15/06 ,  G01N23/207 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a method and a device for measuring distortion capable of obtaining a change in distortion of a sample precisely even when a range of the change in distortion reaches beyond 10-6 by avoiding effects of uneven intensity distribution of an incident X-ray in measuring distortion of a sample such as crystal by utilizing X-ray diffraction. SOLUTION: An X-ray refraction image of a crystal sample 16 is imaged on an imaging plate 20 in a plurality of angle positions in a periphery of a curve peak by referring to a diffraction intensity curve measured by an X-ray detector 18. An angle deviation Δθ(ΔθA, ΔθB) in a predetermined position in respect of a reference position on the crystal sample 16 is calculated by an angle deviation calculating part 24 from a series of the X-ray diffraction images. Based on the calculated angle deviations ΔθA and ΔθB, a calculating part 26 calculates a change in distortion in the predetermined position on the crystal sample 16, that is a relative change Δd/d in an interval of a lattice surface and a relative change Δα in a direction of the lattice surface.

公开(公告)号：JP2000292376A

公开(公告)日：2000-10-20

申请号：JP9927199

申请日：1999-04-06

Applicant: SONY CORP

Inventor： KUDO YOSHIHIRO ,  RYU KOSUKE ,  KAWATO SEIJI

IPC: G01N23/20

Abstract: PROBLEM TO BE SOLVED: To provide a crystal thickness measuring device capable of measuring a crystal thickness in a short time with high precision, without being influenced by a film formed on the crystal surface or by an adhering foreign matter, in the non-contact state where a crystal sample is not damaged. SOLUTION: A characteristic X-ray Xm, which is made monochromatic by a double crystal monochrometer 1 and formed into a parallel luminous flux by a double crystal collimeter 3, is irradiated to a crystal sample 6 rotated minutely, and a diffracted X-ray from the crystal sample 6 is detected by an X-ray detector 7, and a diffracted X-ray intensity curve is formed by a diffracted intensity curve measuring unit 8 based on a detection signal of the X-ray detector 7. A theoretical diffracted X-ray intensity curve using the thickness of the crystal sample 6 operated by a theoretical operation unit 10 as a parameter and the diffracted X-ray intensity curve are compared and determined by a thickness determination unit 11 based on agreement of intervals of Pendellosung beat, to thereby measure the thickness of the crystal sample 6. Hereby, high-precision thickness measurement can be executed by using an X-ray highly-transmissive to the crystal sample 6, without being influenced by dirt on the surface or a surface coat of the crystal sample 6, in the non-contact state where the crystal sample 6 is not damaged, and without receiving restriction of a measurement atmosphere.

公开(公告)号：JPH0346972B2

公开(公告)日：1991-07-17

申请号：JP3784486

申请日：1986-02-22

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI ,  AOKI YOSHIO ,  WAKAYAMA SHOJI

IPC: H01L29/00 ,  H01L21/20 ,  H01L21/322

公开(公告)号：JPS6249628A

公开(公告)日：1987-03-04

申请号：JP6553886

申请日：1986-03-24

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI ,  AOKI YOSHIO ,  WAKAYAMA SHOJI

IPC: H01L21/322

Abstract: PURPOSE:To make no crystal defect by forming a silicon layer on one surface of a silicon substrate and a semiconductor element on the other surface of the silicon substrate. CONSTITUTION:A material consisting of silicon crystal which contain oxygen of 5X10 atoms/cm or more and 1X10 atoms/cm or less is used as a substrate 11. An epitaxial layer 12 is grown on the back of the substrate 11. This prevents the generation or the growth of crystal defects since the substrate 11 contains a required quantity of oxygen, the characteristics of an element is made excellent when the element is formed in the substrate 11 and makes the epitaxial layer 12 have a gettering effect.

公开(公告)号：JPS587059B2

公开(公告)日：1983-02-08

申请号：JP10241974

申请日：1974-09-05

Applicant: SONY CORP

Inventor： KAWATO SEIJI ,  HAYAFUJI TAKANORI ,  ADACHI TOORU

IPC: G01N27/04 ,  G01R31/26 ,  G01R31/302 ,  H01L21/66

公开(公告)号：JPS52153496A

公开(公告)日：1977-12-20

申请号：JP7014376

申请日：1976-06-15

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI

IPC: G01N21/87 ,  G01N1/28

Abstract: PURPOSE:Measurement is easily performed without requiring any special apparatus by letting lattice defects be produced in single crystal such as of Si, etc. and optically observing the relation mutually assumed by each image formed on predetermined surfaces.

公开(公告)号：JP2000088776A

公开(公告)日：2000-03-31

申请号：JP25678398

申请日：1998-09-10

Applicant: SONY CORP

Inventor： KUDO YOSHIHIRO ,  RYU KOSUKE ,  KAWATO SEIJI

IPC: G01B15/00 ,  G01N23/207

Abstract: PROBLEM TO BE SOLVED: To provide a measuring apparatus for a thin film, by which the density of the thin film formed on a crystal substrate can be measured with high accuracy. SOLUTION: By using an X-ray generation device 10, a sample 14 is irradiated with X-rays. By using a detector 15 and a detector 16, diffracted X-rays 14D and specularly reflected X-rays 14R of the sample 14 in which a thin film is formed on a crystal substrate and those of the sample after the removal of the thin film are detected. An X-ray intensity measuring device 17 changes glancing angle of incident X-rays 12B so as to measure the intensity characteristic of the diffracted X-rays 14D before and after the removal of the thin film on the basis of a detection signal S15. A computing device 19 computes a normalized intensity characteristic as the ratio of the intensity characteristic before and after the removal of the thin film. The computing device 19 computes values of parameters in such a way that a normalized theoretical value as the ratio of the theoretical value of the diffracted X-rays 14D having the thickness and the density of the thin film as the parameters in the case of the existence of the thin film to the theoretical value ion the case of the nonexistence of the thin film agrees with the normalized intensity characteristic.

公开(公告)号：JPH116804A

公开(公告)日：1999-01-12

申请号：JP16110797

申请日：1997-06-18

Applicant: SONY CORP

Inventor： RYU KOSUKE ,  KUDO YOSHIHIRO ,  KAWATO SEIJI

IPC: G01B15/02 ,  G01B15/08 ,  G01N23/20 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To accurately determine the thickness, surface roughness, interface roughness, density, composition and the like of a very thin oxide film formed on a silicon substrate by an X-ray reflection factor method. SOLUTION: An X-ray wavelength 3 near a silicon K absorption end is used to allow increase in the amplitude of a vibration component in a reflection factor data even when the density is closer as between a silicon substrate 1 and an oxide film 2. The thickness of an oxide film 2 is determined from the frequency of the vibration component or the accuracy is improved for determining parameters of the thickness, the surface roughness, the interface roughness, the density and the like of the oxide film 2 by a parameter fitting. In addition, the refractive indexes of the oxide film 2 are determined based on the amplitude of the vibration component in a reflection factor data obtained using two X-ray wavelengths 3 or more near the silicon K absorption end and simultaneous equations are solved by using the refractive indexes obtained to determine the densities and the contents of silicon of the oxide film 2. This also enables determining of a composition of even a very thin oxide film 2.

公开(公告)号：JPH07325050A

公开(公告)日：1995-12-12

申请号：JP14111194

申请日：1994-05-31

Applicant: SONY CORP

Inventor： KOJIMA SHIGERU ,  KAWATO SEIJI

IPC: G01N23/22

Abstract: PURPOSE:To carry out measurement with high time resolution even in the case a stimulus generating apparatus has jitter by standardizing the time distribution of output signal intensity of a probe based on the time distribution of external stimuli to the measuring standard signals. CONSTITUTION:A standard signal S1 from a pulse laser apparatus 1 is sent to a second time-amplitude converter (TAC) 8 as a signal which shows a measurement start after the signal passes a level shifter 2, a level adapter 3, and discriminators 4, 5. When measurement is started, emitted x-rays, which are a response from an object 2 to be measured to the x-rays (probe) radiated to the object 2, are emitted and sent to a detecting means 9. The time correlation between the input pulse signal S2 and the measuring standard signal S1 is measured by the first TAC 15 The time distribution of the intensity of the emitted x-rays from the object 2 measured by the TAC 8 is standardized based on the time distribution according to the time correlation measured by the TAC 15. Consequently, jitter the laser apparatus 1 has is compensated and measurement with high time resolution can be carried out.

公开(公告)号：JPS6249631A

公开(公告)日：1987-03-04

申请号：JP6554286

申请日：1986-03-24

Applicant: SONY CORP

Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI ,  AOKI YOSHIO ,  WAKAYAMA SHOJI

IPC: H01L21/322

Abstract: PURPOSE:To eradicate the generation of crystal defects by gettering the back of a silicon substrate which contains oxygen before a heat treatment process. CONSTITUTION:A semiconductor device is obtained by the heat treatment of a semiconductor substrate. In this case, a silicon substrate which contains oxygen of 5X10 -1X10 atoms/cm is used for the semiconductor substrate. The back of the silicon substrate is gettered before the heat treatment process. As a result, such as the characteristics of noise, a leakage current, switching, the storage characteristics of a CCD, etc., are drastically improved.