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1.发明公开RESISTIVE ELEMENT, NEURON ELEMENT, AND NEURAL NETWORK INFORMATION PROCESSING APPARATUS 审中-公开电阻元件，神经元元和装置信息的神经网络的处理
公开(公告)号：EP2157604A4
公开(公告)日：2011-10-26
申请号：EP08764748
申请日：2008-05-27
Applicant: SONY CORP
Inventor： MATSUMURA HAJIME , MATSUI ERIKO
CPC classification number: G06N3/002 , B82Y10/00 , G06N3/063 , H01C7/006 , H01C17/06586 , H01L51/0591
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2.发明公开FRACTAL STRUCTURE AND ITS PRODUCING METHOD, FUNCTIONAL MATERIAL AND ITS PRODUCING METHOD, AND FUNCTIONAL DEVICE AND ITS PRODUCING METHOD 审中-公开用于生产产生与功能设备及工艺，功能材料和工艺;分形结构和生产工艺研究
公开(公告)号：EP1415952A4
公开(公告)日：2006-11-29
申请号：EP02746056
申请日：2002-07-15
Applicant: SONY CORP
Inventor： UGAJIN RYUICHI , MATSUMURA HAJIME , MORI YOSHIFUMI
CPC classification number: B82Y30/00 , B82Y25/00 , H01F10/007 , H01L49/00
Abstract: A fractal structure in which a fractal dimension featuring the self-similarity is formed of mutually different two regions and which has at least one heterojunction. Particularly, in a star-shaped fractal structure, a heterojunction is formed by forming a region (dendritic region) having a low fractal dimension around a nucleus (somatic region) having a high fractal dimension. The phases of the two regions forming the heterojunction are mutually different ones, for example, a ferromagnetic phase and a paramagnetic phase or a metallic phase and a Mott-insulating phase. By using the fractal structure, a functional material or a functional device is realized.
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