METHOD OF PRODUCTION OF SEMICONDUCTOR DEVICE

    公开(公告)号:SG80072A1

    公开(公告)日:2001-04-17

    申请号:SG1999004819

    申请日:1999-09-23

    Applicant: SONY CORP

    Inventor: SAITO TAKASHI

    Abstract: A method of production of a semiconductor device having bumps on its surface and having spaces between the bumps sealed by a resin capable of cutting a wafer accurately positioned to cutting lines giving a cutting margin on the wafer in a dicing step of the semiconductor device. On a semiconductor wafer 10 in which circuit patterns of semiconductor chips are formed in a first region and cutting lines 16 between semiconductor chips are formed extending across the first region and a second region, bumps are formed so as to be connected to the circuit patterns of the semiconductor chips, a resin coating 15 is formed on a bump forming surface of the semiconductor wafer to a predetermined thickness in the first region while sealing the spaces between the bumps and to a thickness enabling confirmation of positions of parts of the cutting lines in regions 16a containing at least the parts of the cutting lines in the second region, and the semiconductor wafer is cut along the cutting lines using as reference positions the cutting lines confirmed in the regions containing at least the parts of the cutting lines in the second region.

    Method for manufacturing austenitic stainless steel, solder melting tank, and automatic soldering apparatus
    3.
    发明专利
    Method for manufacturing austenitic stainless steel, solder melting tank, and automatic soldering apparatus 审中-公开
    制造奥氏体不锈钢,焊锡膏和自动焊接设备的方法

    公开(公告)号:JP2005281731A

    公开(公告)日:2005-10-13

    申请号:JP2004093709

    申请日:2004-03-26

    CPC classification number: B23K3/0646 C23C8/02 C23C8/28 C23C8/34

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing austenitic stainless steel having a passive film containing a nitrization-modified layer on the surface thereof, a solder melting tank formed by using the austenitic stainless steel, and an automatic soldering apparatus formed by using the austenitic stainless steel by which the corrosion resistance is remarkably enhanced by using the stainless steel for a lead-free solder adaptive member.
    SOLUTION: A passive film containing a nitrization-modified layer without chromium nitride (CrN) being present therein is generated on a surface of austenitic stainless steel. The passive film formed of chromium oxide works as a protective film for lead-free solder. As a result, the surface of stainless steel is less liable to be eroded even when the stainless steel is brought into contact with a soldering bath of lead-free solder, the corrosion resistance is considerably improved, and the wear resistance is also enhanced. In a case of SUS316 stainless steel with a passive film formed on the outermost surface, the time before erosion is started as shown by the line Le is prolonged (about 500 hours), and the depth of erosion is reduced (about 20-25 μm), and the serviceable life is expected to improve to be as long as that when lead solder is used.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种在其表面上具有含有氮化改性层的钝化膜的奥氏体不锈钢的制造方法,使用奥氏体不锈钢形成的焊料熔化槽和形成的自动焊接装置 通过使用不锈钢作为无铅焊料适应构件,通过使用耐腐蚀性显着提高的奥氏体不锈钢。 解决方案:在奥氏体不锈钢的表面上产生含有不含氮化铬(CrN)的氮化改性层的钝化膜。 由氧化铬形成的钝化膜用作无铅焊料的保护膜。 结果,即使不锈钢与无铅焊料的焊接浴接触,不锈钢的表面也不易被腐蚀,耐腐蚀性大大提高,耐磨性也提高。 在最外表面形成钝化膜的SUS316不锈钢的情况下,如线Le延长(约500小时)开始腐蚀前的时间,并且侵蚀深度减小(约20-25μm ),使用寿命有望提高到使用铅焊料时的寿命。 版权所有(C)2006,JPO&NCIPI

    Apparatus and method for applying flux
    4.
    发明专利

    公开(公告)号:JP2004148189A

    公开(公告)日:2004-05-27

    申请号:JP2002315732

    申请日:2002-10-30

    Inventor: SAITO TAKASHI

    Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and a method for applying a flux, by which a flux coating without dispersion can be realized on a specimen with a simple configuration.
    SOLUTION: A specimen holding means 4 for holding a specimen 30 for a solder wetting test is arranged above a liquid flux housing vessel 31. A dropping mechanism for dropping the vessel 31 from the position that the specimen 30 is immersed in the flux 32 while keeping the specimen 30 holding position to remove the flux-immersed part of the specimen 30 from the flux 32 so that the flux 32 is applied to the specimen 30.
    COPYRIGHT: (C)2004,JPO

    SEMICONDUCTOR DEVICE AND INTERPOSER
    5.
    发明专利

    公开(公告)号:JP2003249606A

    公开(公告)日:2003-09-05

    申请号:JP2002047750

    申请日:2002-02-25

    Applicant: SONY CORP

    Inventor: SAITO TAKASHI

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device and an interposer in which high- density mounting of a bear chip assembling level which is guaranteed in characteristic and quality can be realized. SOLUTION: The semiconductor device 1 comprises the interposer 2 using a glass substrate having the same coefficient of thermal expansion as that of a semiconductor chip 3 and being excellent in strength, pressure resistance and water resistance, and the semiconductor chip 3 fixed on this interposer 2. The interposer 2 is made of the glass substrate and used for fixing the chip 3. Furthermore, the device has a structure in which a portion around the interposer 2 is made of a glass substrate 3a and the interposer 2 is stacked and mounted by an ACF (anisotropic conductive film) via terminal electrodes 24 provided thereon. COPYRIGHT: (C)2003,JPO

    CHARACTER INPUT DEVICE, CHARACTER INPUT METHOD, CHARACTER INPUT PROGRAM STORAGE MEDIUM AND CHARACTER INPUT PROGRAM

    公开(公告)号:JP2003157144A

    公开(公告)日:2003-05-30

    申请号:JP2001355333

    申请日:2001-11-20

    Applicant: SONY CORP

    Inventor: SAITO TAKASHI

    Abstract: PROBLEM TO BE SOLVED: To remarkably easily input characters. SOLUTION: A hiragana input picture 40 is displayed on a display part 3, a CPU30 detects the touching state of a stylus pen 6 to the display screen of the display part 3 through a touch panel 13 and a touch panel 33 and when the stylus pen 6 touches the prescribed area of the touch panel 13, which faces hiragana input keys 41-50 on the hiragana input picture 40, at one point, on the basis of the detected result, a prescribed character allocated to relevant one of the hiragana input keys 41-50 is inputted. When the stylus pen 6 is moved while touching the prescribed area of the touch panel 13 which faces the hiragana input keys 41-50, a different character is inputted. Thus, a number of characters can be easily inputted by executing extremely simple selecting operation to the hiragana input keys 41-50 so that the characters can be remarkably easily inputted.

    EXTERNAL I/O MECHANISM IN IMAGE PICKUP APPARATUS

    公开(公告)号:JP2002010120A

    公开(公告)日:2002-01-11

    申请号:JP2000190057

    申请日:2000-06-23

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To ensure appropriate input/output of data to/from an external apparatus while reducing the size of an image pickup apparatus, e.g. a digital still camera. SOLUTION: A wiring pattern 13 having one end part arranged on the upper face part of a base section facing the flange of a lens section 20 and the other end part formed on a wiring board is provided on a supporting member 10. A connector part 41 provided at the forward end of a connection cable 40 connected with an external apparatus is inserted between the flange of the lens section 20 and the base section of the supporting member 10 and the forward end part of a terminal pin directed outward from the connector part 41 is connected with one end part of the wiring pattern 13 thus inputting/ outputting data to/from the external apparatus.

    MANUFACTURE OF NONCONTACT TYPE IC CARD AND NONCONTACT TYPE IC CARD

    公开(公告)号:JP2000132655A

    公开(公告)日:2000-05-12

    申请号:JP30752498

    申请日:1998-10-28

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain a method for manufacturing a noncontacting type IC card, by which the mounting of an IC chip to an antenna substrate and the joining process of the antenna substrate with a base material are executed through the use of a low-temp. joining process without requiring a lot of manhour and equipment, and a noncontact type IC card. SOLUTION: The method includes a vamp buring process for buring a vamp 6 by using a high molecular resin and also exposing the vamp 6 by grinding the high molecular resin and an IC chip mounting process for joining the exposure part of the vamp 6 with an electrode terminal 4 by using a conductive adhesive and joining a part except the exposure part of the vamp 6 on a high molecular resin surface where the vamp 6 is buried with the antenna substrate 5 through the use of the high molecular adhesive. The antenna substrate 5 where the IC chip 7 is mounted is joined with at least one second base material while adhered by pressing through the use of a thermoplastic adhesive 9 and also heating and hardening of the conductive adhesive, the high molecular adhesive and the thermoplastic adhesive 9 are simultaneously executed.

    SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

    公开(公告)号:JPH11121486A

    公开(公告)日:1999-04-30

    申请号:JP28322797

    申请日:1997-10-16

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To prevent vertical moving of a chip and a die pad and exclude exposure of a gold wire, the semiconductor chip, the die pad, etc., to the outside, by arranging on the back a spacer means which is bonded to a semiconductor upper surface, and arranging the spacer means on the surface which has a plurality of protrusions retaining a distance between a lower metal mold and a substratum means. SOLUTION: A spacer 17 having a plurality of small protrusions is stuck on the upper surface of a chip 12 before a resin sealing process, a plurality of protrusions 19 are arranged on a lower metal mold used in the resin sealing process, and a recess is formed on the package side. For avoiding mechanical clamping, a gap is formed between the protrusions 19 and a die pad 11. In the resin sealing process when mold resin 15 of the lower side of the spacer 17 previously flows in, and a force pushing the die pad 11 upward due to difference of pressures works, the protrusions in the upper part of the spacer 17 come into contact with an upper metal mold surface and prevent the die pad 11 from ascending. On the other hand, when a force pushing the die pad 11 downward works, the die pad 11 is pressed against a plurality of the protrusions 19 of the lower metal mold, and change of position to the downside is not generated.

    RESIN MOLD
    10.
    发明专利

    公开(公告)号:JPH0820046A

    公开(公告)日:1996-01-23

    申请号:JP17949594

    申请日:1994-07-06

    Applicant: SONY CORP

    Abstract: PURPOSE:To provide a resin mold capable of achieving the miniaturization of a molding machine due to the reduction of mold clamping load. CONSTITUTION:A resin mold 1 is constituted so that the gate parts 13, 23 constituting a gate are formed from a hard alloy having hardness of 1 or more and at least cavity blocks 11, 22 and a center block 12 excepting the gate parts 13, 23 are formed from an alloy other than an iron hard alloy having hardness of 1 or less, for example, an aluminum or copper hard alloy.

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