公开(公告)号：JPS6066894A

公开(公告)日：1985-04-17

申请号：JP17542583

申请日：1983-09-22

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  HORII SHINICHI ,  SATOU HIROMICHI

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/223

Abstract: PURPOSE:To enable the reduction of noise by multimodes and to contrive to facilitate the design by obtaining the reduction in astigmatic difference and the symmetry and stability of a far field pattern by a method wherein the titled device is enabled to have both properties of gain guide type and index guide type. CONSTITUTION:A current restricting region layer 17 serving as a photo absorbing layer having a smaller energy gap than a clad layer 15 and having the conductivity type different from that of the layer 15 is formed in the layer 15, a current concentration part of stripe form being formed by providing a lack part 17a of stripe form at the center of the layer 17 and thus constructing an internal stripe structure. The width W of the part 17a is selected at 3-5mum. Further, the difference in effective refractive index DELTAn(n-nS) when the refractive index of the part corresponding to the part 17a 9s (n), and the refractive index nS under the layer 17 is nS is 8X10 -2X10 .

公开(公告)号：JPS59110186A

公开(公告)日：1984-06-26

申请号：JP21954282

申请日：1982-12-15

Applicant: Sony Corp

Inventor： MATSUDA OSAMU ,  SATOU HIROMICHI ,  MORI YOSHIFUMI

IPC: H01S5/00 ,  H01S5/24 ,  H01S5/32

CPC classification number: H01S5/32 ,  H01S5/24 ,  H01S5/3202 ,  H01S5/3203

Abstract: PURPOSE:To manufacture easily and securely by a method wherein the surface orientation of a growing layer is selected by controlling the condition of vapor phase reaction, and a fixed bent part is formed in an active layer or a layer in the neighborhood thereof. CONSTITUTION:A groove 22 of V-shaped cross-section having the inner side surface along a [111] A crystal surface is formed in stripe through the main surface 21a of a III-V group compound semiconductor substrate 21, and a (Al, Ga) As compound, i.e., a III-V group semiconductor layer 23 is grown on the main surface 21a by an MO (metal organic) CVD method of thermal decomposition vapor growth. When the supply ratio R=CV/CIII of CV the constituent of the Vgroup element As to CIII the constituent of the III group elements Al and Ga is relatively large, the [111] A crystal surface is inherited as it is on the surface of the layer 23. When the thickness of this layer 23 is large, this groove is filled by the crystal growth from the [111] A surface on both sides, and thus flattened.

Abstract translation: 目的：通过控制气相反应条件选择生长层的表面取向的方法容易且可靠地制造，并且在有源层或其附近的层中形成固定的弯曲部。 构成：通过III-V族化合物半导体衬底21的主表面21a，沿着[111] A晶体表面的具有内侧表面的V形横截面的槽22形成条纹，并且（Al， Ga）作为化合物，即III-V族半导体层23通过热分解气相生长的MO（金属有机）CVD法在主表面21a上生长。 当CV的供给比R = CV / CIII时，V组元素的组成对于CIII，III族元素Al和Ga的成分相对较大，[111] A晶体表面在 层23.当该层23的厚度大时，通过两侧的[111] A表面的晶体生长填充该沟槽，从而变平。

公开(公告)号：JPS57193027A

公开(公告)日：1982-11-27

申请号：JP7753781

申请日：1981-05-22

Applicant: SONY CORP

Inventor： SATOU HIROMICHI

IPC: H01L21/22 ,  H01L21/033

Abstract: PURPOSE:To easily provide an insulating film with openings by a method wherein thin wires are run to form a mask and the insulating film is formed. CONSTITUTION:Thin metal wires 2 having a diameter corresponding to the width of a finally provided P region are arranged in parallel at required intervals on an N-type GaAs 1 and an Si3N4 film 3 is formed on the whole surface of the N type GaAs 1 by a CVD method. Banded holes 3a are generated after removing the wires 2. Clear holes 3a are formed by applying light etching to the holes 3a and by removing the thin insulating film at recessed edge sections 3b. The wires 2 can be formed with uniformity and sufficient thinness up to on the order of mum. Therefore, openings 3a can also be formed with similar high accuracy. The manufacturing method can be applied to the manufacture of the semiconductors of every kind and a process is simple and productivity is improved.

公开(公告)号：JPS5635487A

公开(公告)日：1981-04-08

申请号：JP11085879

申请日：1979-08-30

Applicant: SONY CORP

Inventor： MITA ARIO ,  SATOU HIROMICHI

IPC: H01L21/265 ,  H01S5/00 ,  H01S5/20

Abstract: PURPOSE:To control the current passing area of the semiconductor device by implanting an ion beam on the semiconductor layer by providing with a mask thereon and varying the implanting angle thereof. CONSTITUTION:An N type AlGaAs 4, an N type GaAs active layer 5, a P type AlGaAs 6 and a P type GaAs 7 are laminated on an N type GaAs substrate 2, a mask 50 is retained at predetermined distance in disposition, and proton 51 is implanted from obliquely upper rightward and leftward directions thereto. In this case the outside of the region 52c is implanted in double. The implantation depth is formed to 0.5mum above the active layer 5, and adverse effect of the implantation to the crystal defects to the active layer is prevented. After the implantation, a heat treatment is executed. According to this configuration, the active streak width l of the narrow width less than 10mum is regeneratively formed in arbitrary depth, and a desired current passing area can be obtained. After the heat treatment, both ohmic electrodes 60, 61 are attached to both side thereof.

公开(公告)号：JPS5376170A

公开(公告)日：1978-07-06

申请号：JP15274876

申请日：1976-12-17

Applicant: SONY CORP

Inventor： TANAKA EIJI ,  SATOU HIROMICHI

IPC: C25C7/02 ,  C25B11/00

Abstract: PURPOSE:To provide a cathode of improve durability by constituting the cathode of united electrode body and holder made of metal through the medium of cushion material and nonpermeable insulator in order to improve the mechanical strength and to secure electric insulation by the improvement of sealing section.