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公开(公告)号：JP2012138807A
公开(公告)日：2012-07-19
申请号：JP2010290459
申请日：2010-12-27
Inventor： SUGIYAMA HISANOBU , TSUNASHIMA NOBUHIRO
Abstract: PROBLEM TO BE SOLVED: To detect the position of an image sensor with high accuracy without using a special position detection device such as a hall element.SOLUTION: First, a boundary between a portion on the image sensing surface of an image sensor on which light is irradiated by image formation and a dark portion thereon on which light is not irradiated is projected in a direction diagonally displaced relative to the row or the column direction of a pixel array. Next, by a position detection unit, a pixel value is retrieved from plural pixels onto which the boundary is projected, and a brightness distribution in the plural pixels is calculated. Next, by the position detection unit, a change point between brightness where the area on which pixel light is irradiated is half or more in the brightness distribution and darkness where the area on which pixel light is irradiated is less than half is detected. Then, by the position detection unit, the position of the image sensor is calculated from the position of the change point between brightness and darkness.
Abstract translation: 要解决的问题：在不使用诸如霍尔元件的特殊位置检测装置的情况下，高精度地检测图像传感器的位置。 解决方案：首先，通过图像形成照射光的图像传感器的图像感测表面上的部分与未照射光的其上的暗部之间的边界以相对于 像素阵列的行或列方向。 接下来，通过位置检测单元，从投影边界的多个像素中检索像素值，并计算多个像素中的亮度分布。 接下来，通过位置检测单元，检测其中照射像素光的区域的亮度之间的亮度分布中的一半或更多，其中照射像素光的区域的亮度小于一半的变化点。 然后，通过位置检测单元，根据亮度和暗度之间的变化点的位置来计算图像传感器的位置。 版权所有（C）2012，JPO＆INPIT
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公开(公告)号：JP2012138806A
公开(公告)日：2012-07-19
申请号：JP2010290458
申请日：2010-12-27
Inventor： SUGIYAMA HISANOBU
Abstract: PROBLEM TO BE SOLVED: To avoid localized MTF degradation when a subject with periodic patterns is photographed.SOLUTION: In an image sensor used for photographing, two pixels differing in pixel aperture which are formed in different lengths between row and column directions in at least one of the row and the column directions of a pixel array are disposed alternately. The image sensor has its reference position moved in minute steps smaller in size than one pixel from the reference position. Then pixel data of each pixel is retrieved at the reference position of the image sensor, and also pixel data of each pixel is retrieved at a position to which the image sensor has been moved from the reference position in minute steps smaller in size than one pixel. Finally, for each pixel position individually, pixel data is retrieved from two pixels differing in pixel aperture.
Abstract translation: 要解决的问题：为了避免当拍摄具有周期性图案的被摄体时的局部MTF降解。 解决方案：在用于拍摄的图像传感器中，交替地布置在像素阵列的行和列方向中的至少一个方向上在行方向和列方向之间形成不同长度的像素孔径不同的两个像素。 图像传感器的参考位置的移动距离参考位置的尺寸小于一个像素。 然后，在图像传感器的参考位置处检索每个像素的像素数据，并且在图像传感器已经从基准位置移动的位置处检索每个像素的像素数据，其尺寸小于一个像素 。 最后，对于每个像素位置分别，从像素孔径不同的两个像素检索像素数据。 版权所有（C）2012，JPO＆INPIT
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3.发明专利Monitoring system, information processing apparatus, information processing method, and program 审中-公开监控系统，信息处理设备，信息处理方法和程序
公开(公告)号：JP2010015258A
公开(公告)日：2010-01-21
申请号：JP2008172661
申请日：2008-07-01
Inventor： SUGIYAMA HISANOBU , KIKUCHI TOSHIO , HIRASAWA TATSUAKI
IPC: G08B13/196 , G08B13/183 , G08B25/00 , H04N7/18
Abstract: PROBLEM TO BE SOLVED: To improve tolerability against environmental changes, for monitoring effectively.
SOLUTION: A monitoring system receives light signals from a plurality of LED light sources transmitting identification information by the light signals, detects disconnections in detection lines connecting sensor and the LED light sources on the basis of a light source position table in which the position information and the identification information of the plurality of LED light sources are stored in association with each other, and detects the position of a monitoring object.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提高对环境变化的耐受性，有效监测。 解决方案：监测系统从多个LED光源接收光信号，通过光信号传输识别信息，根据光源位置表检测连接传感器和LED光源的检测线中的断开情况，其中 多个LED光源的位置信息和识别信息相互关联地存储，并且检测监视对象的位置。 版权所有（C）2010，JPO＆INPIT
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4.发明专利Information processor and information processing method, learning device and learning method, and program 审中-公开信息处理器和信息处理方法，学习设备和学习方法和程序
公开(公告)号：JP2007189589A
公开(公告)日：2007-07-26
申请号：JP2006007257
申请日：2006-01-16
Inventor： SHINMYO KATSUNAO , TAKAHASHI KENJI , ICHIKAWA TSUTOMU , SAWAO TAKASHI , YANO KOJI , SUGIYAMA HISANOBU , OKUMURA AKIHIRO , INOUE TAKAO , TAKAHASHI NORIAKI , KONDO TETSUJIRO
CPC classification number: H04N5/367 , G06T5/002 , G06T5/005 , G06T2207/20081 , H04N5/357
Abstract: PROBLEM TO BE SOLVED: To further accurately eliminate the noise included in an image photographed by an image sensor. SOLUTION: An image sensor part 11 supplies a photographed image to a class classification adaptive processing part 14 while supplying photographing condition information, which shows photographing conditions when photographing a subject, to a factor ROM number calculation part 12. The factor ROM number calculation part 12 supplies a factor ROM number of an optimal factor ROM to a factor ROM storage part 13 after designating the optimal factor ROM from among factor ROMs 13-1-13-r on the basis of the photographing conditions. The factor ROM storage part 13 acquires a prediction factor corresponding to a class code from the designated factor ROM. The class classification adaptive processing part 14 outputs a processed image generated by eliminating noise from the photographed image after calculating the processed image while using the prediction factor obtained by supplying a class code, which is generated by subjecting the photographed image to a class classification, to the factor ROM storage part 13. The information processor and information processing method, learning device and learning method, and program are applicable to an image pickup device. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：进一步精确地消除由图像传感器拍摄的图像中包括的噪声。 解决方案：图像传感器部分11将拍摄的图像提供给类分类自适应处理部分14，同时提供将拍摄对象的拍摄条件的拍摄条件信息提供给因子ROM数量计算部分12.因子ROM编号 计算部分12根据拍摄条件从因子ROM13-1-13-r中指定最佳因子ROM之后，将因子ROM的因数ROM号提供给因子ROM存储部分13。 因子ROM存储部分13从指定的因子ROM获取对应于类别代码的预测因子。 类别分类自适应处理部分14在使用通过将通过对所拍摄的图像进行类别分类而产生的类别代码获得的预测因子输出到计算处理后的图像之后，从拍摄图像中消除噪声而产生的处理图像， 因子ROM存储部分13.信息处理器和信息处理方法，学习装置和学习方法以及程序可应用于图像拾取装置。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2004233177A
公开(公告)日：2004-08-19
申请号：JP2003021359
申请日：2003-01-30
Inventor： SUGIYAMA HISANOBU
CPC classification number: G01B11/2518
Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and a method capable of real-time and three-dimensional measurements by accurately separating disturbance light even if the intensity of projected laser light is weak.
SOLUTION: An object to be measured S is irradiated with the laser light as it is being scanned, and the three-dimensional shape of the object is measured by reading reflected light of the laser light. The laser light emergent from a laser light source 1 is separated at prescribed angle by a hologram plate 2 into a plurality of slit lights A and B to irradiate the object to be measured S as it is being scanned. By reading the reflected light of the slit lights A and B and computing as to whether an interval corresponds to the prescribed angle or not, the effects of disturbance light is removed to perform accurate three-dimensional measurements.
COPYRIGHT: (C)2004,JPO&NCIPIAbstract translation: 要解决的问题：即使投影激光的强度较弱，也能够通过精确地分离干扰光来提供能够进行实时和三维测量的装置和方法。 解决方案：被扫描对象物被激光照射，并且通过读取激光的反射光来测量物体的三维形状。 从激光光源1射出的激光以规定角度被全息图板2分离成多个狭缝光A，B，照原样扫描对象物S。 通过读取狭缝光A和B的反射光并计算间隔是否对应于规定角度，除去干扰光的影响以进行精确的三维测量。 版权所有（C）2004，JPO＆NCIPI
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Patent Agency Ranking
公开(公告)号：JPH11177070A
公开(公告)日：1999-07-02
申请号：JP34017997
申请日：1997-12-10
Applicant: SONY CORP
Inventor： SUGIYAMA HISANOBU
IPC: G11C16/04 , G11C16/02 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
Abstract: PROBLEM TO BE SOLVED: To allow a select transistor on the bit-line side to function in a small area and reduce the occupied area of memory cell array in a NAND memory cell array. SOLUTION: A plurality of memory transistors M12a to M14a in a NAND memory cell array are provided respectively with a laminated gate in which a floating gate FG and a control gate CG are laminated successively with a gate insulation film 8 and an inter-gate insulation film 10 interposed on a channel formation area and between layers, on a channel formation area (e.g. p well 4) for transistor rows made of semiconductor. The gate electrode layer SG of a transistor M11a at the end of the side of bit line BLa in the transistor row is overlaid on both the floating gate FG and channel formation area 4 respectively with the inter-gate insulation film 10 and simultaneously formed gate insulation film 12.
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公开(公告)号：JPH1139887A
公开(公告)日：1999-02-12
申请号：JP18873397
申请日：1997-07-14
Applicant: SONY CORP
Inventor： SUGIYAMA HISANOBU
Abstract: PROBLEM TO BE SOLVED: To enable shortening of the write time and erase time by providing a control means which is setting the first voltage of the write or erase signal pulses to the initial voltage having the first width and then sequentially setting the second and subsequent voltages larger than the initial voltage having the width narrower than the first width. SOLUTION: A pulse generating circuit 20 outputs a pulse signal Sp having different voltage levels of the predetermined width depending on the voltages V1 to Vm generated by a voltage boosting circuit 10 of a write circuit using the power source voltage Vcc. A decoder 30 selects one word line among the word lines WL1 to WLn depending on an input address signal ADR and impresses a pulse signal Sp to write or erase the data to/from the memory cell connected. A write circuit sets the second and subsequent voltage levels which become gradually larger having the width as short as 2 μs. Thereby, high speed writing and erasing can be conducted.
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公开(公告)号：JPH10222995A
公开(公告)日：1998-08-21
申请号：JP5576997
申请日：1997-03-11
Applicant: SONY CORP
Inventor： ARASE KENSHIROU , NODA MASANORI , SUGIYAMA HISANOBU , NAIKI TADAHACHI
Abstract: PROBLEM TO BE SOLVED: To achieve a semiconductor non-volatile storage that is capable of carrying out highspeed data programming. SOLUTION: Error correction means 20 and 30 are provided for correcting error bits when reading of page data in word line units is conducted and a specified number of error bits or less exist in page read-out data. Then, in a page program in work line units, a specific number of program/verification operations are repeated, the number of program non-completion memory cells is counted by a count circuit 40 when the program non-completion memory cells exist. Then, when the number is within a specific number of error bits or less as in the above for achieving error correction, the data program is completed while leaving the program non-completed memory cells and the error bits are rescued by an error correction means, thus achieving a data program speedily without causing a speed to be controlled by a memory cell with an extremely slow program that exists only rarely.
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公开(公告)号：JPH10112194A
公开(公告)日：1998-04-28
申请号：JP26447596
申请日：1996-10-04
Applicant: SONY CORP
Inventor： ARASE KENSHIROU , SUGIYAMA HISANOBU , NODA MASANORI
Abstract: PROBLEM TO BE SOLVED: To obtain a non-volatile semiconductor memory which can perform a page program at high speed. SOLUTION: This device is provided with a first memory array 10 and a second memory array 20 in which a page program is performed with a word line unit and which are paired each other, and a control circuit 40 performing transfer operation and program operation of page program data [Da] and [Db] for the two memory arrays 10, 20 mutually and in parallel. Thereby, data programming can be performed at the speed two times as mush as the normal speed.
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公开(公告)号：JPH08212771A
公开(公告)日：1996-08-20
申请号：JP9925795
申请日：1995-04-25
Applicant: SONY CORP
Inventor： SUGIYAMA HISANOBU
Abstract: PURPOSE: To realize a ferroelectric memory device in which data can be read while the potential of a plate electrode is fixed and which can shorten the reading time. CONSTITUTION: In a write operation, potentials of plate electrodes for ferroelectric capacitors FC1, FC2 are fixed at Vcc/2, switching transistors Tr1, Tr2 are set in continuity for a prescribed period, high and low potentials Vcc, 0V are applied to bit lines BL1, BL2 so as to sandwich the plate electrodes, and the polarization state of the ferroelectric capacitors is set. In a reading operation, the potentials of the plate electrodes are fixed at Vcc/2, and the switching transistors Tr1, Tr2 are set in continuity for a prescribed period. The difference in a change in the potentials of the bit lines BL1, BL2 is detected, the bit lines BL1, BL2 are latched to the potentials Vcc, 0V which are higher or lower than the potentials of the plate electrodes on the basis of the difference, and data is written again by a voltage which is applied across both ends of the ferroelectric capacitors FC1, FC2.
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