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    FABRICATION OF CONDUCTIVE MICRO TRACES USING A DEFORM AND SELECTIVE REMOVAL PROCESS
    1.
    发明申请
    FABRICATION OF CONDUCTIVE MICRO TRACES USING A DEFORM AND SELECTIVE REMOVAL PROCESS 审中-公开
    使用变形和选择性去除工艺制造导电微量纤维

    公开(公告)号：WO2007136734B1

    公开(公告)日：2008-02-21

    申请号：PCT/US2007011881

    申请日：2007-05-18

    Applicant: SOUTHWALL TECHNOLOGIES INC ,  PETHE RAJIV ,  KAST MICHAEL A ,  TSENG SCOTT C-J ,  BERGSTROM NEIL ,  KOZAK JULIUS

    Inventor： PETHE RAJIV ,  KAST MICHAEL A ,  TSENG SCOTT C-J ,  BERGSTROM NEIL ,  KOZAK JULIUS

    IPC: H01R4/58

    CPC classification number: H05K3/041 ,  H05K1/0393 ,  H05K3/046 ,  H05K3/107 ,  H05K3/244 ,  H05K2203/0108 ,  H05K2203/0528

    Abstract: In a method of forming micro traces (64; 110, 112 and 114; and 409), stamping techniques are employed to define a target pattern of the micro traces. The stamping is applied to electrically conductive material (405; 700) and may be limited to pressure, but a thermal stamping approach may be utilized. Following the stamping, a portion of the conductive material is removed (305), leaving the target pattern of conductive micro traces. In the pressure-application step, the pressure or the combination of pressure and temperature is sufficient to at least weaken the integrity of the bulk conductive material along the area of contact. Typically, this step causes shearing of the conductive material. Following the pressure-application step, excess conductive material is removed. In some embodiments of the invention, the thickness of the micro traces is not determined in a single step. The original thickness may be formed using a "seed" material (104). The subsequent material buildup (108) may occur after the target pattern is established.

    Abstract translation: 在形成微迹线（64; 110,112和114;和409）的方法中，使用冲压技术来定义微迹线的目标图案。 冲压被应用于导电材料（405,700），并且可以被限制到压力，但是可以利用热冲压方法。 在冲压之后，去除导电材料的一部分（305），留下导电微迹线的目标图案。 在压力施加步骤中，压力或压力和温度的组合足以至少削弱沿着接触区域的体导电材料的完整性。 通常，该步骤导致导电材料的剪切。 在压力施加步骤之后，除去过量的导电材料。 在本发明的一些实施例中，微迹线的厚度在单个步骤中未确定。 原始厚度可以使用“种子”材料（104）形成。 随后的材料积累（108）可以在目标图案建立之后发生。

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