公开(公告)号：DE69425488D1

公开(公告)日：2000-09-14

申请号：DE69425488

申请日：1994-02-04

Applicant: SOUTHWALL TECHNOLOGIES INC

Inventor： GIBBONS P ,  LAU C ,  WOODARD E

IPC: B32B15/09 ,  C23C14/02 ,  C23C14/08 ,  C23C14/20 ,  C23C14/34 ,  C23C28/00 ,  H05K1/03 ,  H05K3/38 ,  B32B31/00 ,  B32B33/00

Abstract: The adhesion to plastic substrates of thick layers of functional metals having an oxide heat of formation that is greater than -40,000 calories/gram atom of metal, such as silver, copper, gold, and the like, is improved if a thin layer of a metal having an oxide heat of formation of less than -50,000 calories/gram atom of metal is present as an adhesion-promoting primer layer. When the primer layer metal has a melting point greater than 1100 DEG C., it should be present as the metal or as a substoichiometric oxide. When the primer layer metal has a melting point less than 1100 DEG C., it may be present as the metal, as a substoichiometric oxide, or as a full stoichiometric oxide. Processes for preparing these materials using sputter-depositing and reflectors incorporating these materials are also disclosed.

公开(公告)号：DE69425488T2

公开(公告)日：2001-01-11

申请号：DE69425488

申请日：1994-02-04

Applicant: SOUTHWALL TECHNOLOGIES INC

Inventor： GIBBONS P ,  LAU C ,  WOODARD E

IPC: B32B15/09 ,  C23C14/02 ,  C23C14/08 ,  C23C14/20 ,  C23C14/34 ,  C23C28/00 ,  H05K1/03 ,  H05K3/38 ,  B32B31/00 ,  B32B33/00

Abstract: The adhesion to plastic substrates of thick layers of functional metals having an oxide heat of formation that is greater than -40,000 calories/gram atom of metal, such as silver, copper, gold, and the like, is improved if a thin layer of a metal having an oxide heat of formation of less than -50,000 calories/gram atom of metal is present as an adhesion-promoting primer layer. When the primer layer metal has a melting point greater than 1100 DEG C., it should be present as the metal or as a substoichiometric oxide. When the primer layer metal has a melting point less than 1100 DEG C., it may be present as the metal, as a substoichiometric oxide, or as a full stoichiometric oxide. Processes for preparing these materials using sputter-depositing and reflectors incorporating these materials are also disclosed.