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公开(公告)号：CA2829946A1
公开(公告)日：2012-09-20
申请号：CA2829946
申请日：2012-03-14
Applicant: SPECTRASENSORS INC
Inventor： NEUBAUER GABI , FEITISCH ALFRED , SCHREMPEL MATHIAS
Abstract: A first contact surface ( 310 ) of a semiconductor laser chip ( 302 ) can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface ( 310 ). A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip ( 302 ) can be soldered to a carrier mounting along the first contact surface ( 310 ) using a solder composition ( 306 ) by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
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公开(公告)号：CA2829946C
公开(公告)日：2017-04-04
申请号：CA2829946
申请日：2012-03-14
Applicant: SPECTRASENSORS INC
Inventor： NEUBAUER GABI , FEITISCH ALFRED , SCHREMPEL MATHIAS
Abstract: A first contact surface ( 310 ) of a semiconductor laser chip ( 302 ) can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface ( 310 ). A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip ( 302 ) can be soldered to a carrier mounting along the first contact surface ( 310 ) using a solder composition ( 306 ) by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
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公开(公告)号：CA2844789C
公开(公告)日：2016-09-20
申请号：CA2844789
申请日：2012-08-14
Applicant: SPECTRASENSORS INC
Inventor： SCHREMPEL MATHIAS , FEITISCH ALFRED , NEUBAUER GABI
IPC: H01S5/022 , H01L23/485 , H01S5/042
Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride
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公开(公告)号：AU2013334609A1
公开(公告)日：2015-04-16
申请号：AU2013334609
申请日：2013-10-23
Applicant: SPECTRASENSORS INC
Inventor： FEITISCH ALFRED , NEUBAUER GABI , SCHREMPEL MATHIAS
Abstract: A first contact surface (310) of a semiconductor laser chip (302) can be formed to a first target surface roughness and a second contact surface (312) of a carrier mounting (304) can be formed to a second target surface roughness. A first bond preparation layer (306) comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer (308) comprising a second metal can optionally be applied to the formed second contact surface. Both preparation layers may be made of gold and diffusion bonding results from a heating of device under pressure. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described.
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公开(公告)号：AU2012296657A1
公开(公告)日：2014-02-27
申请号：AU2012296657
申请日：2012-08-14
Applicant: SPECTRASENSORS INC
Inventor： SCHREMPEL MATHIAS , FEITISCH ALFRED , NEUBAUER GABI
IPC: H01S5/022 , H01L23/485 , H01S5/042
Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride
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Patent Agency Ranking
公开(公告)号：AU2015202533A1
公开(公告)日：2015-05-28
申请号：AU2015202533
申请日：2015-05-11
Applicant: SPECTRASENSORS INC
Inventor： NEUBAUER GABI , FEITISCH ALFRED , SCHREMPEL MATHIAS
Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
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公开(公告)号：AU2012296657B2
公开(公告)日：2015-05-21
申请号：AU2012296657
申请日：2012-08-14
Applicant: SPECTRASENSORS INC
Inventor： SCHREMPEL MATHIAS , FEITISCH ALFRED , NEUBAUER GABI
IPC: H01S5/022 , H01L23/485 , H01S5/042
Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride
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公开(公告)号：AU2012229907A1
公开(公告)日：2013-10-03
申请号：AU2012229907
申请日：2012-03-14
Applicant: SPECTRASENSORS INC
Inventor： NEUBAUER GABI , FEITISCH ALFRED , SCHREMPEL MATHIAS
Abstract: A first contact surface ( 310 ) of a semiconductor laser chip ( 302 ) can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface ( 310 ). A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip ( 302 ) can be soldered to a carrier mounting along the first contact surface ( 310 ) using a solder composition ( 306 ) by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
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公开(公告)号：AU2015202533B2
公开(公告)日：2016-09-01
申请号：AU2015202533
申请日：2015-05-11
Applicant: SPECTRASENSORS INC
Inventor： NEUBAUER GABI , FEITISCH ALFRED , SCHREMPEL MATHIAS
Abstract: A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
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公开(公告)号：CA2844789A1
公开(公告)日：2013-02-21
申请号：CA2844789
申请日：2012-08-14
Applicant: SPECTRASENSORS INC
Inventor： SCHREMPEL MATHIAS , FEITISCH ALFRED , NEUBAUER GABI
IPC: H01S5/022 , H01L23/485 , H01S5/042
Abstract: A first contact (310) surface of a semiconductor laser chip (302) is formed to a surface roughness selected to have a maximum peak to valley height that is substantially smaller than a diffusion barrier layer thickness. A diffusion barrier layer that includes a non-metallic, electrically-conducting compound and that has the barrier layer thickness is applied to the first contact surface, and the semiconductor laser chip is soldered to a carrier mounting (304) along the first contact surface using a solder composition (306) by heating the soldering composition to less than a threshold temperature at which dissolution of the barrier layer into the soldering composition occurs. Thereby the diffusion barrier remains contiguous. The non-metallic, electrically conducting compound may comprise at least one of titanium nitride, titanium oxy-nitride, tungsten nitride, cerium oxide and cerium gadolinium oxy-nitride
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