公开(公告)号：JPH1116914A

公开(公告)日：1999-01-22

申请号：JP10615698

申请日：1998-04-16

Applicant: ST MICROELECTRON INC

Inventor： SIDHWA ARDESHIR J ,  MELOSKY STEPHEN JOHN

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8249 ,  H01L23/532 ,  H01L27/06

Abstract: PROBLEM TO BE SOLVED: To provide a manufacture method in which stress in the forming process of a metallic mutual connection signal line with the thinning of an integrated circuit is relieved and cracks not occur. SOLUTION: An opening 36 is formed by making it pass through an interlayered dielectric layer 34, a Ti/TiN layer 39 is adhered to it, and a tungsten plug 38 is formed in the opening 36. A metal adhered titanium layer 40 is formed on the upper faces of the plug 38 and the Ti/TiN layer 39. Then, an AlCu layer 42 having 0.5% of CuO is adhered on the upper face at 460 deg.C at the speed of about 50 Å/second for required thickness. A TiN antireflection layer 44 is formed on the AlCu layer 42 in a gas atmosphere, where a N2 /Ar ratio is 1.5:1.