公开(公告)号：JPH10321833A

公开(公告)日：1998-12-04

申请号：JP8317698

申请日：1998-03-30

Applicant: ST MICROELECTRON INC

Inventor： NGUYEN LOI N

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8244 ,  H01L23/52 ,  H01L27/108 ,  H01L27/11

Abstract: PROBLEM TO BE SOLVED: To reduce the aspect ratio of a contact and, at the same time, to increase the area of the contact by forming a gate composed of polysilicon or a poly-silicide having at least one surface nonperpendicularly to a substrate on at least one side wall. SOLUTION: A gate 48 (poly 1 layer) which has a chamfered surface 50 which is formed nonperpendicularly to the main surface of a substrate 42 and is made of polysilicon or a poly-silicide is formed on a gate oxide layer 44. Although a local interconnecting body 58 (poly 2 layer) is formed thereafter, the body 58 is separated from the chamfered surface 50 of the gate 48 by the minimum distance 'y' between a side-wall adaptive corner section 60 formed between the side wall of the gate 48 and the chamfered surface 50 and the nearest point 62 on the body 58. Thus an improved separating distance can be obtained between the poly 1 and 2 layers and, at the same time, a self-aligned contact can be realized.

公开(公告)号：JPH1187529A

公开(公告)日：1999-03-30

申请号：JP18261598

申请日：1998-06-29

Applicant: ST MICROELECTRON INC

Inventor： NGUYEN LOI N

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/485 ,  H01L27/088

Abstract: PROBLEM TO BE SOLVED: To form a contact having high aspect ratio. SOLUTION: Nitride spacers 28, 30 are formed along a gate electrode 24 for partitioning a lightly doped drain(LDD) region. Further, in the case of forming a nitride cap layer 18 on a gate electrode and forming a contact opening 20 via an interlayer oxide dielectric film, the cap and sidewall spacers are protected so that the electrode 24 is not damaged or short-circuited. Then, a plug 42 made of heavily doped polysilicon is formed in the opening, and a board 10 existing at a lower side, namely, a contact is formed. A metallization is formed on the polysilicon plug 42 in a normal form.