公开(公告)号：JP2003123490A

公开(公告)日：2003-04-25

申请号：JP2002224663

申请日：2002-08-01

Applicant: ST MICROELECTRONICS INC

Inventor： FASOLI LUCA GIOVANNI

IPC: G11C16/02 ,  G11C16/04 ,  G11C16/06 ,  G11C16/08 ,  G11C16/26

Abstract: PROBLEM TO BE SOLVED: To provide a user configurable dual bank memory device. SOLUTION: The memory device has a plurality of core banks consisting of memory cells and a set of storage elements having stored therein configuration information. The configuration information may be used to configure, that is, to group core banks of memory cells to form a dual bank memory device. The memory device has a control circuit for preventing a memory read operation from being completed in a core bank or user-configured dual bank in which an ongoing memory modify (program or erase) operation is being performed. The memory device further has a first set of sense amplifiers dedicated to performing sense amplification only during memory read operations, and a second sense amplifiers dedicated to performing sense amplification only during memory modify operations.

公开(公告)号：JP2003132690A

公开(公告)日：2003-05-09

申请号：JP2002224398

申请日：2002-08-01

Applicant: ST MICROELECTRONICS INC

Inventor： FASOLI LUCA GIOVANNI

IPC: G11C16/02 ,  G11C11/56 ,  G11C16/22 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a nonvolatile memory device provided with a sector protection circuit. SOLUTION: A method and circuit for providing sector protection to sectors of nonvolatile memory cells are provided. The circuit includes maintaining sector protection information in the core of memory cells in the nonvolatile memory device. In this way, the circuit and/or algorithms utilized for reading and modifying memory cells in the memory cell core that maintain the sector protection information is the same utilized for reading and modifying the other memory cells in the core.

公开(公告)号：DE60228797D1

公开(公告)日：2008-10-23

申请号：DE60228797

申请日：2002-07-31

Applicant: ST MICROELECTRONICS INC

Inventor： MATARRESE STELLA ,  FASOLI LUCA GIOVANNI

IPC: G11C16/06 ,  G11C29/00 ,  G11C29/04

Abstract: A method and circuit are disclosed for replacing defective columns of flash memory cells in a flash memory device. The circuit includes a plurality of sets of storage elements, each set of storage elements being capable of identifying a single addressed column of memory cells is to be replaced or a main column line and regular columns of memory cells associated therewith to be replaced. In the event a main column line and the associated regular columns are identified for replacement by a set of storage elements, the set additionally indicates whether the regular columns are regular columns in a single block of memory cells or multiple blocks. Redundancy circuitry performs the replacement operation during a memory access operation based upon the information stored in the sets of storage elements.

公开(公告)号：DE60216543D1

公开(公告)日：2007-01-18

申请号：DE60216543

申请日：2002-07-31

Applicant: ST MICROELECTRONICS INC

Inventor： FASOLI LUCA GIOVANNI

IPC: G11C16/02 ,  G11C16/22 ,  G11C11/56 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: A method and circuit are disclosed for providing sector protection to sectors of nonvolatile memory cells in a nonvolatile memory device. The circuit includes maintaining sector protection information in the core of memory cells in the nonvolatile memory device. In this way, the circuitry and/or algorithms utilized for reading and modifying memory cells in the memory cell core that maintain the sector protection information is the same utilized for reading and modifying the other memory cells in the core.