公开(公告)号：JPH11220662A

公开(公告)日：1999-08-10

申请号：JP31416798

申请日：1998-11-05

Applicant: ST MICROELECTRONICS INC

Inventor： GUERRIERI ROBERTO ,  RAMBALDI ROBERTO ,  TARTAGNI MARCO

IPC: H01L27/146 ,  H04N5/363 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/335

Abstract: PROBLEM TO BE SOLVED: To provide a method and device for compensating a kTC noise in the individual pixel of an array for forming a MOS image. SOLUTION: At first, a photo-diode is exposed to a reset voltage, and then a well area is cut from Vdd , and floated so that compensation can be attained. The well is floated so that a kTC charge introduced later (at the end of a reset process) can be re-distributed, and therefore, most of this is stored on a capacitor between the well and a substrate. Afterwards, the well is clamped to the Vdd again, and the noise stored in the capacitor between the well and the substrate is offset. This device is provided with an array constituted of plural pixels, and each pixel is provided with each well. Moreover, access to the power supply source (Vdd ) should be switchable. Therefore, a transistor is provided at the connecting part of each pixel.

公开(公告)号：JPH11238867A

公开(公告)日：1999-08-31

申请号：JP31361598

申请日：1998-11-04

Applicant: ST MICROELECTRONICS INC

Inventor： GUERRIERI ROBERTO ,  BISIO MARCO ,  TARTAGNI MARCO

IPC: H01L27/146 ,  G01B7/28 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378 ,  H04N5/335

Abstract: PROBLEM TO BE SOLVED: To provide a technique for reducing a capacity of an input line of a charge amplifier. SOLUTION: A charge amplifier, which is suitably applicable to a read circuit in a solid-state image sensor is provided. The charge amplifier has a general amplifier element and a fast buffer, which drives a metal shield 218 arranged below an input line 212. The metal shield 218 follows up the voltage of the input line 212 and reduces the capacity between the input line 212 and a ground.