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公开(公告)号：JP2003132692A
公开(公告)日：2003-05-09
申请号：JP2002225477
申请日：2002-08-02
Applicant: ST MICROELECTRONICS INC
Inventor： MICHAEL ORON , SEVER ILAN
Abstract: PROBLEM TO BE SOLVED: To provide technology by which sense amplifier operation in a nonvolatile memory device is performed further efficiently. SOLUTION: This sense amplifier circuit has a current source that is configurable to source any of at least two nonzero current levels in the sense amplifier circuit. The amplifier circuit is controlled by control circuitry in the nonvolatile memory device so that each sense amplifier circuit sources a first current level during the pre-charge cycle of a memory read operation, and a second current level being greater than the first current level during the memory cell sense operation. In this way, the sense amplifier circuit consumes less power during the memory read operation without an appreciable loss in performance.
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公开(公告)号：JP2003109392A
公开(公告)日：2003-04-11
申请号：JP2002226102
申请日：2002-08-02
Applicant: ST MICROELECTRONICS INC
Inventor： MICHAEL ORON , SEVER ILAN
Abstract: PROBLEM TO BE SOLVED: To provide a technology for generating effectively a reference current in a nonvolatile semiconductor memory. SOLUTION: A reference current generator circuit supplies reference current to a sense amplifier in a flash memory device. This circuit has a reference current generator generating a reference current used for a sense amplifier circuit. A current buffer circuit in the flash memory device mirrors the reference current, and a plurality of mirrored reference currents is applied to the reference input. A startup circuit is utilized in order to provide a fast setting time of the reference node appearing at the input of the sense amplifier.
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公开(公告)号：DE60212272D1
公开(公告)日：2006-07-27
申请号：DE60212272
申请日：2002-07-31
Applicant: ST MICROELECTRONICS INC
Inventor： MICHAEL ORON , SEVER ILAN
Abstract: A sense amplifier circuit and method are disclosed for nonvolatile memory devices, such as flash memory devices. The sense amplifier circuit includes a current source that is configurable to source any of at least two nonzero current levels in the sense amplifier circuit. The sense amplifier circuit is controlled by control circuitry in the nonvolatile memory device so that each sense amplifier circuit sources a first current level during the precharge cycle of a memory read operation, and a second current level, greater than the first current level, during the memory cell sense operation. In this way, the sense amplifier circuit consumes less power during the memory read operation without an appreciable loss in performance.
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公开(公告)号：DE60214805D1
公开(公告)日：2006-11-02
申请号：DE60214805
申请日：2002-07-31
Applicant: ST MICROELECTRONICS INC
Inventor： MICHAEL ORON , SEVER ILLAN
Abstract: Reference generator circuitry for providing a reference to sense amplifiers in a flash memory device. The circuitry includes a reference current generator for generating a reference current for use by the sense amplifier circuits. A current buffer circuit in the flash memory device mirrors the reference current and applies a plurality of mirrored reference currents to the reference inputs of the sense amplifiers. A startup circuit is utilized in order to provide a fast settling time of the reference node appearing at the input of the sense amplifiers. The startup circuit includes first and second discharge current stages, with the first discharge current stage discharging the charge appearing at the reference node input of the sense amplifiers based upon a bandgap reference current. The second discharge current stage discharging the charge appearing at the reference node input of the sense amplifiers based upon the reference current. Each discharge current stage utilizes feedback to gradually decrease the rate of discharge by the discharge current stage so that the discharge current stages are disabled by the time the voltage appearing at the reference node input of the sense amplifiers reaches the desired voltage level.
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