公开(公告)号：JP2002208273A

公开(公告)日：2002-07-26

申请号：JP2001400099

申请日：2001-12-28

Applicant: ST MICROELECTRONICS INC

Inventor： RICODEAU FRANCOIS PIERRE

IPC: G11C11/404 ,  G11C11/4074 ,  G11C11/409

Abstract: PROBLEM TO BE SOLVED: To provide a device for pumping a memory cell in a memory and a method therefor. SOLUTION: Voltage on a memory cell is pumped (up or down), thereby, voltage stored in a memory cell is increased (upper than a voltage value of logic 1) or decreased (lower than a voltage value of logic 0), also, voltage difference increased on a bit line is given during a read-out operation period after that of the memory cell. When voltage of logic 1 or 0 is coupled to a first plate for storing, a second plate is held at lower or higher voltage respectively (suitably, voltage being a complementary logic value of a stored value). Voltage on the second plate is raised or dropped correspondingly after a word line was non-activated (thereby, a memory cell is cutoff from a bit line, a logic 1 voltage value or a logic 0 voltage value is stored). The second plate is raised or dropped to pre-charge voltage and balancing voltage (normally, Vdd/2). That is, voltage stored in the memory cell is pumped to higher voltage (when logic 1 is stored) or lower voltage (when logic 0 is stored).