公开(公告)号：JP2002160154A

公开(公告)日：2002-06-04

申请号：JP2001282610

申请日：2001-09-18

Applicant: ST MICROELECTRONICS INC

Inventor： SAMPSON RONALD KEVIN

IPC: G01N29/14 ,  B24B37/013 ,  B24B49/00 ,  H01L21/304 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To provide a technology for detecting a scratch, namely, damage on a wafer at a site during chemical and mechanical polishing. SOLUTION: An acoustic radiation sample with respect to chemical and mechanical polishing processing is gathered and analyzed with the usage of Fourier transform in order to detect the vibration of the wafer showing the scratch, namely, the damage. When an extreme noise level is detected in a frequency or a frequency band of a monitor, the polishing processing is stopped and an alarm is generated with respect to an operator. Such detection in the site minimizes the damage to the wafer at polishing and restricts the damage to a single wafer, not a series of the wafers. Polishing ending point detection can be integrated with a scratch detection mechanism.