公开(公告)号：JP2001118937A

公开(公告)日：2001-04-27

申请号：JP2000275326

申请日：2000-09-11

Applicant: ST MICROELECTRONICS INC

Inventor： CHAN TSIU CHIU ,  ZAMANIAN MEHDI

IPC: H01L21/8244 ,  H01L27/11

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which is usable in severe radiating environments, such as in outer space. SOLUTION: The device includes an active gate-isolating structure, which is disposed in series with an oxide isolating region between active regions of a memory cell array. The active gate-isolating structure has a polysilicon gate layer coupled electrically to a gate oxide and a supply terminal, and the active gate isolating structure prevents an adjacent active region from extending to form a conducting channel. The gate oxide of the active gate isolating structure is relatively thinner than that of a conventional oxide isolating region. Consequently, adverse effects of electric charges captured by radiation can be reduced.

公开(公告)号：DE69324864T2

公开(公告)日：1999-10-07

申请号：DE69324864

申请日：1993-08-19

Applicant: ST MICROELECTRONICS INC

Inventor： ZAMANIAN MEHDI ,  WORLEY JAMES LEON

IPC: H01L21/82 ,  H01L21/8244 ,  H01L27/11

公开(公告)号：DE69324864D1

公开(公告)日：1999-06-17

申请号：DE69324864

申请日：1993-08-19

Applicant: ST MICROELECTRONICS INC

Inventor： ZAMANIAN MEHDI ,  WORLEY JAMES LEON

IPC: H01L21/82 ,  H01L21/8244 ,  H01L27/11