公开(公告)号：FR2984600A1

公开(公告)日：2013-06-21

申请号：FR1162048

申请日：2011-12-20

Applicant: ST MICROELECTRONICS ROUSSET

Inventor： LOPEZ LAURENT ,  DELLAMARCA VINCENZO

IPC: H01L21/8238 ,  H01L21/8239

Abstract: The transistor has a source area (2) and a drain area (3) formed in a semiconductor substrate (1). A floating gate (FG) is placed between a control gate (CG) and the substrate to accumulate electric charges. A channel area (C1) extends under the floating gate and the control gate. The channel area includes a part (P1) placed in an injection zone for hot carriers, where the part includes a non-zero length (L1) and a non-zero width (W1). Another part (P2) of the area presents another non-zero length (L2) and another non-zero width, where the former width is lower than the latter width. An independent claim is also included for a method for increasing injection output of a transistor.