公开(公告)号：JP2010287894A

公开(公告)日：2010-12-24

申请号：JP2010134365

申请日：2010-06-11

Applicant: St Microelectronics (Rousset) Sas ,  エス テ マイクロエレクトロニクス(ローセット)エス アー エス

Inventor： FORNARA PASCAL ,  RIVERO CHRISTIAN

IPC: H01L21/822 ,  G06K19/073 ,  H01L27/04

CPC classification number: G01R31/2851 ,  G01L9/0042 ,  G06K19/07363 ,  G06K19/07381 ,  H01L22/34 ,  H01L23/576 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a device for detecting a part reduced in thickness of a substrate of an IC chip. SOLUTION: This device for detecting a part reduced in thickness of a substrate of an IC chip includes, in an active region of the substrate, a plurality of resistors connected as a Wheatstone bridge and dispersed in a rod shape; a first pair of facing resistors of the bridge are directed in a first direction; a second pair of facing resistors of the bridge are directed in a second direction; and the first and second directions are directions for changing an imbalance value of the bridge by parts of the substrate reduced in thickness. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于检测IC芯片的基板的厚度减小的部件。 解决方案：用于检测IC芯片的基板的厚度减小的装置包括在基板的有源区域中连接有惠斯登电桥并分散成棒状的多个电阻器; 桥的第一对面对电阻器沿第一方向被引导; 桥的第二对面对电阻器沿第二方向被引导; 并且第一和第二方向是用于通过减小厚度的基板的一部分改变桥的不平衡值的方向。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：AT529892T

公开(公告)日：2011-11-15

申请号：AT09757723

申请日：2009-05-12

Applicant: ST MICROELECTRONICS ROUSSET SAS

Inventor： FORNARA PASCAL

IPC: H01L21/8246 ,  G11C16/00 ,  G11C17/00 ,  H01L27/02 ,  H01L27/112 ,  H01L27/115

Abstract: A non-volatile memory including at least first and second memory cells each including a storage MOS transistor with dual gates and an insulation layer provided between the two gates. The insulation layer of the storage transistor of the second memory cell includes at least one portion that is less insulating than the insulation layer of the storage transistor of the first memory cell.