公开(公告)号：US20140138686A1

公开(公告)日：2014-05-22

申请号：US14085565

申请日：2013-11-20

Applicant: ST Microelectronics (Rousset) SAS

Inventor： Sylvie Wuidart ,  Mathieu Lisart ,  Alexandre Sarafianos

IPC: H01L21/66

CPC classification number: H01L23/576 ,  G06F21/75 ,  H01L22/14 ,  H01L22/30 ,  H01L22/34 ,  H01L2924/0002 ,  Y10T307/76 ,  H01L2924/00

Abstract: An integrated circuit, including: a semiconductor substrate of a first conductivity type; a plurality of regions of the first conductivity type vertically extending from the surface of the substrate, each of the regions being laterally delimited all along its periphery by a region of the second conductivity type; and a device for detecting a variation of the substrate resistance between each region of the first conductivity type and an area for biasing the substrate to a reference voltage.

Abstract translation: 一种集成电路，包括：第一导电类型的半导体衬底; 所述第一导电类型的多个区域从所述基板的表面垂直延伸，每个所述区域沿着其外围沿着所述第二导电类型的区域横向界定; 以及用于检测第一导电类型的每个区域和用于将衬底偏压的区域之间的衬底电阻变化为参考电压的装置。