公开(公告)号：US3755704A

公开(公告)日：1973-08-28

申请号：US3755704D

申请日：1970-02-06

Applicant: STANFORD RESEARCH INST

Inventor： SPINDT C ,  SHOULDERS K ,  HEYNICK L

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/16 ,  H01J1/02

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/319

Abstract: Vacuum devices incorporate electron or field forming sources formed by a cellular array of emission sites. The sources comprise a metal/insulator/metal film sandwich on a substrate with a cellular array of holes through the upper metal and insulator, leaving the edges of the upper metal electrode effectively exposed to the upper surface of the lower metal electrode. Sharp protuberances directed toward the upper electrode and constituting emitter tips of controlled configurations are formed on the exposed area of the lower electrode. A method of forming the structure includes starting with the metal/insulator/metal film sandwich having the cellular array of holes already formed and directing permanent electrode material into the cellular array of holes and masking or subsequently removable material onto the surface surrounding the holes whereby an individual sharp cone-like emitter is formed within each of the holes in the cellular array. Vacuum devices are formed from such structures. For example, a diode is formed either by making the masking material over each emission site an electrode or by removing the masking material and applying a conductive electrode material over each emission site.

Abstract translation: 真空装置包含由发射部位的细胞阵列形成的电子或场成形源。 源包括金属/绝缘体/金属膜夹在基板上，孔穿过上金属和绝缘体，使上金属电极的边缘有效地暴露于下金属电极的上表面。 在下电极的暴露区域上形成有朝向上电极并构成受控结构的发射极尖端的锋利突起。 形成该结构的方法包括从金属/绝缘体/金属膜夹层开始，具有已经形成的孔的孔状阵列，并将永久电极材料引导到孔的多孔阵列中，并将掩模或随后的可移除材料掩盖在围绕孔的表面上， 在蜂窝阵列中的每个孔内形成单个尖锐的锥形发射器。 真空装置由这种结构形成。 例如，通过在每个发射部位上形成掩模材料，或者通过去除掩模材料并在每个发射部位上施加导电电极材料来形成二极管。

公开(公告)号：US3789471A

公开(公告)日：1974-02-05

申请号：US3789471D

申请日：1972-01-03

Applicant: STANFORD RESEARCH INST

Inventor： SPINDT C ,  SHOULDERS K ,  HEYNICK L

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/319

Abstract: Vacuum devices incorporate electron or field forming sources formed by a cellular array of emission sites. The sources comprise a metal/insulator/metal film sandwich on a substrate with a cellular array of holes through the upper metal and insulator, leaving the edges of the upper metal electrode effectively exposed to the upper surface of the lower metal electrode. Sharp protuberances directed toward the upper electrode and constituting emitter tips of controlled configurations are formed on the exposed area of the lower electrode. A method of forming the structure includes starting with the metal/insulator/metal film sandwich having the cellular array of holes already formed and directing permanent electrode material into the cellular array of holes and masking or subsequently removable material onto the surface surrounding the holes whereby an individual sharp cone-like emitter is formed within each of the holes in the cellular array. Vacuum devices are formed from such structures. For example, a diode is formed either by making the masking material over each emission site an electrode or by removing the masking material and applying a conductive electrode material over each emission site.

Abstract translation: 真空装置包含由发射部位的细胞阵列形成的电子或场成形源。 源包括金属/绝缘体/金属膜夹在基板上，孔穿过上金属和绝缘体，使上金属电极的边缘有效地暴露于下金属电极的上表面。 在下电极的暴露区域上形成有朝向上电极并构成受控结构的发射极尖端的锋利突起。 形成该结构的方法包括从金属/绝缘体/金属膜夹层开始，具有已经形成的孔的孔状阵列，并将永久电极材料引导到孔的多孔阵列中，并将掩模或随后的可移除材料掩盖在围绕孔的表面上， 在蜂窝阵列中的每个孔内形成单个尖锐的锥形发射器。 真空装置由这种结构形成。 例如，通过在每个发射部位上形成掩模材料，或者通过去除掩模材料并在每个发射部位上施加导电电极材料来形成二极管。