公开(公告)号：EP0132323A2

公开(公告)日：1985-01-30

申请号：EP84304409.0

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Bunz, Lewis Andrew ,  Schachter, Rozalie ,  Viscogliosi, Marcello

IPC: H01L21/314 ,  H01L29/24 ,  H01L21/203

CPC classification number: H01L29/51 ,  H01L21/314 ,  H01L21/32051 ,  H01L51/0508 ,  H01L51/0512 ,  Y10S428/938 ,  Y10T428/12528

Abstract: A process for the production of a semiconducting catenated phosphorus film characterised in that it comprises sputtering a thin film thereof onto a substrate is disclosed.
The present process may be applied to the production of semiconductor devices. Referring to the accompanying illustrative drawing, a sputtered film 22 may be used in a sandwich configuration on a glass substrate 24 with a metallic lock contact 26 and metal dot top contacts 28.
For example, amorphous and polycrystalline films of KP 15 may be formed by RF diode sputtering targets of KP 15 and excess phosphorus in an argon phase. Substrate temperatures up to 280-300°C provide amorphous films. Higher temperatures provide microcrystalline or polycristalline films. These films have high resistance and may be used as the insulator in MIS devices employing III-V semiconductors. Co-sputtering with nickel increases the conductivity of the films from approximately 10 -10 (ohm-cm)- 1 to 10- 2 (ohm-cm) -1 ; only reduces the optical gap by 0.2 eV; and reduces the activation energy from 0.8 eV to 0.2 eV; the nickel content varying from 5-15%. Substrates include glass, silicon, tantalum, stainless steel, gallium phosphide and gallium arsenide, and glass metallized with metals, such as titanium, nickel and aluminium. Double diode electrical characteristics have been observed in devices formed on metallized glass substrates having co-sput- . terred thereon thin film polyphosphides and nickel with nickel and titanium top contacts.
The present invention represents an advance over the prior art.

Abstract translation: 公开了一种制备半导电性连接磷膜的方法，其特征在于，其包括将其薄膜溅射到基底上。 本方法可以应用于半导体器件的制造。 参考附图，溅射膜22可以以夹层结构用于具有金属锁定触点26和金属点顶触点28的玻璃基板24上。例如，KP15的非晶和多晶膜 可以由在氩相中的KP15的RF二极管溅射靶和过量的磷形成。 基材温度高达280-300℃，提供非晶膜。 较高的温度提供微晶或多晶硅膜。 这些膜具有高电阻，并且可以用作使用III-V半导体的MIS器件中的绝缘体。 使用镍的共溅射使得膜的电导率从大约10 -1（ohm-cm）-1到10 -3（ohm-cm）<1> <1>; 仅将光学间隙减小了0.2eV; 并将活化能从0.8eV降低到0.2eV; 镍含量从5-15％变化。 基板包括玻璃，硅，钽，不锈钢，磷化镓和砷化镓，以及金属如钛，镍和铝金属化的玻璃。 已经在形成有金属化玻璃基板上的器件中观察到双二极管电特性，其上共溅射有薄膜多磷化物和具有镍和钛顶部触点的镍。 本发明代表了现有技术的进步。

公开(公告)号：EP0165027A2

公开(公告)日：1985-12-18

申请号：EP85304050.9

申请日：1985-06-07

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Schachter, Rozalie ,  Viscogliosi, Marcello ,  Bunz, Lewis Andrew

IPC: H01L29/78 ,  H01L29/24 ,  H01L21/314 ,  H01L21/34 ,  H01L21/363 ,  H01L29/80

CPC classification number: H01L51/0541 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02581 ,  H01L21/314 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/518 ,  H01L29/8126 ,  H01L51/001 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545

Abstract: A thin film transistor characterised in that it comprises, as a switched semiconductor portion thereof, a thin film comprising MP x wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity is disclosed.
A process for the production of a transistor characterised in that it comprises vacuum plasma sputtering of successive layers in contact of a semiconductor comprising MP x , wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity; and an insulating layer comprising a pnictide is also disclosed.
An insulated semidconductor device characterised in that it comprises as the switched semiconductor portion thereof a layer comprising MP., wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity; and an insulating layer comprising a pnictide is further disclosed.
Referring to the accompanying illustrative diagram, a Schottlky barrier thin film field effect transistor in accordance with the present invention may comprise a glass substrate (20), a high pnictide polypnictide semiconductor (22) of high resistivity, a metal (approximately 1 % Ni) doped layer (24) of the same semiconductor material of lower resistivity and metal source (26), gate (28) and drain (30) contacts deposited on layer (24).
The present invention provides advances over the prior art.

Abstract translation: 一种薄膜晶体管，其特征在于，其包含作为其切换半导体部分的包含MPx的薄膜，其中M表示至少一种碱金属; P代表至少一个pnictide; 并且公开了从15到无穷大的x。 一种用于制造晶体管的方法，其特征在于，其包括与包含MPx的半导体接触的连续层的真空等离子体溅射，其中M表示至少一种碱金属; P表示至少一个pnictide，x的范围从15到无穷大; 并且还公开了包含pnictide的绝缘层。 一种绝缘半导体器件，其特征在于，其包含作为其开关半导体部分的包含MPx的层，其中M表示至少一种碱金属; P： 代表至少一个pnictide; 并且x的范围为15至无穷大，并且还公开了包含pnictide的绝缘层。 参考附图，根据本发明的肖特基势垒薄膜场效应晶体管可以包括玻璃衬底（20），高电阻率的高电阻聚合半导体（22），金属（约1％Ni） 掺杂层（24），其沉积在层（24）上的较低电阻率的金属源（26），栅极（28）和漏极（30）的相同半导体材料。 本发明提供了先有技术的进步。

公开(公告)号：EP0165027A3

公开(公告)日：1987-08-19

申请号：EP85304050

申请日：1985-06-07

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Schachter, Rozalie ,  Viscogliosi, Marcello ,  Bunz, Lewis Andrew

IPC: H01L29/78 ,  H01L29/24 ,  H01L21/314 ,  H01L21/34 ,  H01L21/363 ,  H01L29/80

CPC classification number: H01L51/0541 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02581 ,  H01L21/314 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/518 ,  H01L29/8126 ,  H01L51/001 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545

Abstract: A thin film transistor characterised in that it comprises, as a switched semiconductor portion thereof, a thin film comprising MP x wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity is disclosed. A process for the production of a transistor characterised in that it comprises vacuum plasma sputtering of successive layers in contact of a semiconductor comprising MP x , wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity; and an insulating layer comprising a pnictide is also disclosed. An insulated semidconductor device characterised in that it comprises as the switched semiconductor portion thereof a layer comprising MP., wherein M represents at least one alkali metal; P represents at least one pnictide; and x ranges from 15 to infinity; and an insulating layer comprising a pnictide is further disclosed. Referring to the accompanying illustrative diagram, a Schottlky barrier thin film field effect transistor in accordance with the present invention may comprise a glass substrate (20), a high pnictide polypnictide semiconductor (22) of high resistivity, a metal (approximately 1 % Ni) doped layer (24) of the same semiconductor material of lower resistivity and metal source (26), gate (28) and drain (30) contacts deposited on layer (24). The present invention provides advances over the prior art.

Abstract translation: 一种薄膜晶体管，其特征在于，其包含作为其切换半导体部分的包含MPx的薄膜，其中M表示至少一种碱金属; P代表至少一个pnictide; 并且公开了从15到无穷大的x。 一种用于制造晶体管的方法，其特征在于，其包括与包含MPx的半导体接触的连续层的真空等离子体溅射，其中M表示至少一种碱金属; P表示至少一个pnictide，x的范围从15到无穷大; 并且还公开了包含pnictide的绝缘层。 一种绝缘半导体器件，其特征在于，其包含作为其开关半导体部分的包含MPx的层，其中M表示至少一种碱金属; P： 代表至少一个pnictide; 并且x的范围为15至无穷大，并且还公开了包含pnictide的绝缘层。 参考附图，根据本发明的肖特基势垒薄膜场效应晶体管可以包括玻璃衬底（20），高电阻率的高电阻聚合半导体（22），金属（约1％Ni） 掺杂层（24），其沉积在层（24）上的较低电阻率的金属源（26），栅极（28）和漏极（30）的相同半导体材料。 本发明提供了先有技术的进步。

公开(公告)号：EP0207607A1

公开(公告)日：1987-01-07

申请号：EP86303775.0

申请日：1986-05-19

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Bunz, Lewis Andrew ,  Raccah, Paul Mordecai ,  Viscogliosi, Marcello ,  Olego, Diego Jose ,  Schachter, Rozalie ,  Serreze, Harvey Bruce

IPC: H01L21/314 ,  H01L21/306

CPC classification number: H01L33/44 ,  H01L21/02052 ,  H01L21/30621 ,  H01L21/314 ,  H01L23/291 ,  H01L23/3171 ,  H01L31/02161 ,  H01L31/18 ,  H01L33/0062 ,  H01L51/0508 ,  H01L51/0512 ,  H01L2924/0002 ,  H01L2924/13063 ,  Y10S438/958 ,  H01L2924/00

Abstract: Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, Gap, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms (4 x 10⁶cms) thick and grown preferably by molecular beam deposition, although other processes, such as vacuum evaporation, sputtering, chemical vapour deposition and deposition from a liquid melt, may be used. The layers are grown on the (100) (110) and (111) surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and metal-­semiconductor (Schottky) devices, for example, to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices, such as light-emitting diodes, lasers, solar cells, photo-cathodes and photo-detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.

Abstract translation: Pnictides薄膜，特别是磷，生长在III-V族半导体，特别的InP，GaP和砷化镓，是无定形的，并具有一种新的层状，片状起皱本地订单。 薄膜通常是400埃厚，并且通过分子束沉积优选生长，尽管其它过程，：诸如真空蒸发，溅射（×10 <6> CMS 4），化学气相沉积和沉积从液态熔体，可以使用。 这些层生长的III-V族晶体的（100）（110）和（111）表面上。 所述Pnictides层降低表面态的密度，并且允许待调制的耗尽层，该表面阻挡层减少，在表面处的电子浓度的增加，并且在所述表面复合速度的降低和光致发光强度增加。 这些层可以在MIS被利用和金属 - 半导体（肖特基）装置，例如，以绝缘和钝化的MISFET钝化MESFET，以减少在PIN反向偏压暗电流的表面电流分量和雪崩二极管，从而能够提高 如发光二极管，激光器，太阳能电池，光电阴极和光电检测器：光电器件，颜色的表现。 所述Pnictides层可以被施加到具有Pnictides成分的金属间和化合物半导体。 所述pnictides可以是磷，砷，锑或铋或它们的组合。

公开(公告)号：EP0132323A3

公开(公告)日：1986-11-26

申请号：EP84304409

申请日：1984-06-28

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Bunz, Lewis Andrew ,  Schachter, Rozalie ,  Viscogliosi, Marcello

IPC: H01L21/314 ,  H01L29/24 ,  H01L21/203

CPC classification number: H01L29/51 ,  H01L21/314 ,  H01L21/32051 ,  H01L51/0508 ,  H01L51/0512 ,  Y10S428/938 ,  Y10T428/12528

Abstract: A process for the production of a semiconducting catenated phosphorus film characterised in that it comprises sputtering a thin film thereof onto a substrate is disclosed. The present process may be applied to the production of semiconductor devices. Referring to the accompanying illustrative drawing, a sputtered film 22 may be used in a sandwich configuration on a glass substrate 24 with a metallic lock contact 26 and metal dot top contacts 28. For example, amorphous and polycrystalline films of KP 15 may be formed by RF diode sputtering targets of KP 15 and excess phosphorus in an argon phase. Substrate temperatures up to 280-300°C provide amorphous films. Higher temperatures provide microcrystalline or polycristalline films. These films have high resistance and may be used as the insulator in MIS devices employing III-V semiconductors. Co-sputtering with nickel increases the conductivity of the films from approximately 10 -10 (ohm-cm)- 1 to 10- 2 (ohm-cm) -1 ; only reduces the optical gap by 0.2 eV; and reduces the activation energy from 0.8 eV to 0.2 eV; the nickel content varying from 5-15%. Substrates include glass, silicon, tantalum, stainless steel, gallium phosphide and gallium arsenide, and glass metallized with metals, such as titanium, nickel and aluminium. Double diode electrical characteristics have been observed in devices formed on metallized glass substrates having co-sput- . terred thereon thin film polyphosphides and nickel with nickel and titanium top contacts. The present invention represents an advance over the prior art.