公开(公告)号：WO1987000965A1

公开(公告)日：1987-02-12

申请号：PCT/US1986001649

申请日：1986-08-08

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： STAUFFER CHEMICAL COMPANY ,  KUCK, Mark, A. ,  GERSTEN, Susan, W. ,  BAUMANN, John, A.

IPC: H01L21/18

CPC classification number: C30B25/02 ,  C23C16/301 ,  C30B29/40

Abstract: The arsine, phosphine and trimethyl triethyl, or trialkyl arsine or trialkyl phosphine adducts of triethyl or trimethyl indium sources of the prior art are replaced by one or more pnictide (Group V) bubblers; that is, heated sources of elemental pnictides through which a carrier gas is allowed to flow. The elemental pnictide gas and the carrier gas are supplied in a stream as are a group III organometallic gas, a carrier gas, and hydrogen to a chemical vapor deposition reactor where they react to form III-V semiconductors surface layers on a substrate. The carrier gas may be nitrogen, or a noble gas such as argon. Alternatively hydrogen may be used as the carrier gas so that the reaction is carried out in an exclusive hydrogen atmosphere. At least some of this hydrogen may be monoatomic hydrogen. The substrate may be a III-V semiconductor or glass. Products include layers of gallium arsenide, indium phosphide and alloys thereof, including gallium indium arsenide and gallium aluminum arsenide. Other ternary and quaternary III-V simiconductors are produced using appropriate combinations of sources of group III organometallic gases and group V elemental gases produded by bubblers. The products may be used in semiconductor devices including solar cells.

Abstract translation: 现有技术的三乙基或三甲基铟源的胂，膦和三甲基三乙基或三烷基胂或三烷基膦加合物被一个或多个Ⅳ（V族）起泡器代替; 也就是说，允许载气流过的元素的加热源。 将元素气体和载气以与III族有机金属气体，载气和氢气一样的流体供应到化学气相沉积反应器，在其中它们反应以在基底上形成III-V半导体表面层。 载气可以是氮气，也可以是惰性气体例如氩气。 或者可以使用氢作为载气，使得反应在专用氢气气氛中进行。 该氢中的至少一些可以是单原子氢。 衬底可以是III-V半导体或玻璃。 产品包括砷化镓，磷化铟及其合金的层，包括砷化铟镓和砷化镓铝。 使用适当组合的III族有机金属气体和通过起泡器产生的V族元素气体来生产其它三元和四元III-V型半导体。 该产品可用于包括太阳能电池的半导体器件。