公开(公告)号：EP0212910A3

公开(公告)日：1988-11-30

申请号：EP86306055

申请日：1986-08-06

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Kuck, Mark A. ,  Baumann, John A. ,  Gersten, Susan W.

IPC: C23C16/30 ,  H01L21/205

CPC classification number: C30B25/02 ,  C23C16/301 ,  C30B29/40

Abstract: A method of chemical vapour deposition characterised in that it comprises:
(A) producing a first gas stream comprising a Group III organometallic gas and a carrier gas; (B) producing a second gas stream comprising an elemental Group V metal gas from an elemental source and a carrier gas; and (C) supplying said gas streams to a reactor where they react to form a III-V semiconductor; and, optionally (D) supplying hydrogen gas to said reactor is disclosed. A chemical vapour deposition apparatus characterised in that it comprises:
(A) first means (8) for producing a first gas stream comprising a Group III organometallic gas and a carrier gas; (B) second means (6) for producing a second gas stream comprising an elemental Group V metal gas from an elemental source and a carrier gas; and (C) a reactor (4) to which said gas streams are supplied where they react to form a III-V semiconductor; and, optionally, (D) third means for supplying hydrogen gas to said reactor is also disclosed. The present invention provides advantages over the prior art. The arsine, phosphine and trimethyl triethyl, or trialkyl arsine or trialkyl phosphine adducts of triethyl or trimethyl indium sources of the prior art are replaced by one or more pnictide (Group V) bubblers; that is, heated sources of elemental pnic- tides through which a carrier gas is allowed to flow. The elemental pnictide gas and the carrier gas are supplied in a stream as are a Group III organometallic gas, a carrier gas, and hydrogen to a chemical vapour deposition reactor where they react to form III-V semiconductors surface layers on a substrate. The carrier gas may be nitrogen, or a noble gas, such as argon. Alternatively, hydrogen may be used as the carrier gas so that the reaction is carried out in an exclusive hydrogen atmosphere. At least some of this hydrogen may be monoatomic hydrogen. The substrate may be a III-C semiconductor or glass. Products include layers of gallium arsenide, indium phosphide and alloys thereof, including gallium indium arsenide and gallium aluminium arsenide. Other ternary and quaternary III-V semiconductors are produced using appropriate combinations of sources of Group III organometallic gases and Group V elemental gases produced by bubblers. The products may be used in semiconductor devices including solar cells.

Abstract translation: 一种化学气相沉积的方法，其特征在于其包括：（A）产生包含III族有机金属气体和载气的第一气流; （B）从元素源和载气产生包含元素V族金属气体的第二气流; 和（C）将所述气流供应到反应器，在反应器中反应以形成III-V半导体; 并且公开了任选地（D）向所述反应器供应氢气。 一种化学气相沉积设备，其特征在于其包括：（A）用于产生包含III族有机金属气体和载气的第一气流的第一装置（8） （B）用于从元素源和载气产生包含元素V族金属气体的第二气流的第二装置（6） 和（C）反应器（4），其中所述气流被供应到所述反应器，在那里它们反应以形成III-V半导体; 和任选的D）还公开了向所述反应器供应氢气的第三装置。 本发明提供了优于现有技术的优点。 现有技术的三乙基或三甲基铟源的胂，膦和三甲基三乙基或三烷基胂或三烷基膦加合物被一个或多个氙（V族）起泡器代替; 也就是说，允许载气流过的元素的加热源。 将元素气体和载气以与III族有机金属气体，载体气体和氢气一样的流体供应到化学气相沉积反应器，在其中反应以在衬底上形成III-V半导体表面层。 载气可以是氮气，也可以是惰性气体，例如氩气。 或者，可以使用氢作为载气，使得反应在专用氢气氛中进行。 该氢中的至少一些可以是单原子氢。 衬底可以是III-C半导体或玻璃。 产品包括砷化镓，磷化铟及其合金层，包括砷化铟镓和砷化镓砷化镓。 使用合适的III族有机金属气体源和由起泡器产生的V族元素气体的组合产生其它三元和四元III-V半导体。 该产品可用于包括太阳能电池的半导体器件。

公开(公告)号：EP0212910A2

公开(公告)日：1987-03-04

申请号：EP86306055.4

申请日：1986-08-06

Applicant: STAUFFER CHEMICAL COMPANY

Inventor： Kuck, Mark A. ,  Baumann, John A. ,  Gersten, Susan W.

IPC: C23C16/30 ,  H01L21/205

CPC classification number: C30B25/02 ,  C23C16/301 ,  C30B29/40

Abstract: A method of chemical vapour deposition characterised in that it comprises:

(A) producing a first gas stream comprising a Group III organometallic gas and a carrier gas;
(B) producing a second gas stream comprising an elemental Group V metal gas from an elemental source and a carrier gas; and
(C) supplying said gas streams to a reactor where they react to form a III-V semiconductor; and, optionally
(D) supplying hydrogen gas to said reactor is disclosed.

A chemical vapour deposition apparatus characterised in that it comprises:

(A) first means (8) for producing a first gas stream comprising a Group III organometallic gas and a carrier gas;
(B) second means (6) for producing a second gas stream comprising an elemental Group V metal gas from an elemental source and a carrier gas; and
(C) a reactor (4) to which said gas streams are supplied where they react to form a III-V semiconductor; and, optionally,
(D) third means for supplying hydrogen gas to said reactor is also disclosed.

The present invention provides advantages over the prior art.
The arsine, phosphine and trimethyl triethyl, or trialkyl arsine or trialkyl phosphine adducts of triethyl or trimethyl indium sources of the prior art are replaced by one or more pnictide (Group V) bubblers; that is, heated sources of elemental pnic- tides through which a carrier gas is allowed to flow. The elemental pnictide gas and the carrier gas are supplied in a stream as are a Group III organometallic gas, a carrier gas, and hydrogen to a chemical vapour deposition reactor where they react to form III-V semiconductors surface layers on a substrate. The carrier gas may be nitrogen, or a noble gas, such as argon. Alternatively, hydrogen may be used as the carrier gas so that the reaction is carried out in an exclusive hydrogen atmosphere. At least some of this hydrogen may be monoatomic hydrogen. The substrate may be a III-C semiconductor or glass. Products include layers of gallium arsenide, indium phosphide and alloys thereof, including gallium indium arsenide and gallium aluminium arsenide. Other ternary and quaternary III-V semiconductors are produced using appropriate combinations of sources of Group III organometallic gases and Group V elemental gases produced by bubblers. The products may be used in semiconductor devices including solar cells.

Abstract translation: 化学气相沉积DASS它的方法包括：（a）产生一个第一气体流，包括一组III有机金属气体和载气; （b）产生一个第二气体流从气体元素源和载气的元素，其包括第V族金属; 和（C）供应所述气体流的反应器中在那里它们反应以形成III-V族半导体; 和，任选地（D）供给氢气到所述反应器中游离缺失盘。 一种化学气相沉积设备DASS它包括：（a）第一装置（8）用于产生第一气流包含III族的有机金属气体和载气; （B）第二装置（6），用于从气体产生第二气体流，以元素包括第V族金属元素源和载气; 和（C）的反应器（4）其中，所述气体流被提供在那里它们反应以形成III-V族半导体; 因此，和任选，D），用于供给氢气至所述反应器的第三装置是游离缺失盘。 本发明提供优于现有技术的优点。 的现有技术的三乙基或三甲基铟源的胂，膦和三甲基三乙基，三烷基或胂或三烷基膦加合物由一个或多个Pnictides（第V组）起泡器代替; 所做的是，元素的pnictides加热源，通过该载气被允许流动。 元素Pnictides气体和载气供给流中的作为是第III族的有机金属气体，载气和氢气的化学气相沉积反应器在那里它们反应以形成在基板III-V族半导体表面层。 载气可以是氮气，或稀有气体，：如氩气。 可替换地，可以使用氢作为载气，以便做的反应是在不包括氢气氛中进行。 在至少一些这种氢可以是单原子氢。 衬底可以是III-C半导体或玻璃。 产品包括砷化镓，磷化铟层和它们的合金，铟砷化镓包含和镓铝砷。 其它三元和四元III-V半导体使用的III族有机金属气体的来源和通过起泡产生的V族元素的气体适当组合产生的。 该产品可以在包括太阳能电池半导体装置中使用。