公开(公告)号：EP0928959A3

公开(公告)日：1999-12-08

申请号：EP99300189.0

申请日：1999-01-12

Applicant: STMicroelectronics, Inc.

Inventor： Kalnitsky, Alexander ,  Kramer, Alan ,  Fabbrizio, Vito ,  Gozzini, Giovanni ,  Gupta, Bhusan ,  Sabarini, Marco

IPC: G01L9/12 ,  G01P15/125

CPC classification number: G01L9/0072 ,  G01P15/0802 ,  G01P15/125 ,  H01G5/16

Abstract: A variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response to an external stimulus. A method of making such a variable capacitor is also described in which the capacitor is built in a layered structure with the top layer including a portion of dielectric material extending into the space between the capacitor plates. After formation of the top layer, an intermediate layer is etched away to render the top layer flexible to facilitate movement of the dielectric material in the space between the capacitor plates.

公开(公告)号：EP0928959B1

公开(公告)日：2004-08-11

申请号：EP99300189.0

申请日：1999-01-12

Applicant: STMicroelectronics, Inc.

Inventor： Kalnitsky, Alexander ,  Kramer, Alan ,  Fabbrizio, Vito ,  Gozzini, Giovanni ,  Gupta, Bhusan ,  Sabarini, Marco

IPC: G01L9/12 ,  G01P15/125

CPC classification number: G01L9/0072 ,  G01P15/0802 ,  G01P15/125 ,  H01G5/16

公开(公告)号：EP0928959A2

公开(公告)日：1999-07-14

申请号：EP99300189.0

申请日：1999-01-12

Applicant: STMicroelectronics, Inc.

Inventor： Kalnitsky, Alexander ,  Kramer, Alan ,  Fabbrizio, Vito ,  Gozzini, Giovanni ,  Gupta, Bhusan ,  Sabarini, Marco

IPC: G01L9/12 ,  G01P15/125

CPC classification number: G01L9/0072 ,  G01P15/0802 ,  G01P15/125 ,  H01G5/16

Abstract: A variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response to an external stimulus. A method of making such a variable capacitor is also described in which the capacitor is built in a layered structure with the top layer including a portion of dielectric material extending into the space between the capacitor plates. After formation of the top layer, an intermediate layer is etched away to render the top layer flexible to facilitate movement of the dielectric material in the space between the capacitor plates.

Abstract translation: 描述了半导体器件中的可变电容器，其中电容由于外部刺激而在电容器的板之间的空间中的电介质材料的移动而变化。 还描述了制造这种可变电容器的方法，其中电容器内置在分层结构中，顶层包括延伸到电容器板之间的空间中的介电材料的一部分。 在形成顶层之后，蚀刻掉中间层以使顶层柔性以促进电介质材料在电容器板之间的空间中的移动。