公开(公告)号：EP1324395A2

公开(公告)日：2003-07-02

申请号：EP02258606.9

申请日：2002-12-13

Applicant: STMicroelectronics, Inc.

Inventor： Santoruvo, Gaetano ,  Lo Priore, Stefano

IPC: H01L29/78 ,  H01L27/02

CPC classification number: H05B3/28 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00873 ,  B01L3/5027 ,  B01L7/52 ,  B41J2/14129 ,  B41J2202/13 ,  H01L23/345 ,  H01L27/1203 ,  H01L29/0657 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated heater formed as a field effect transistor in a semiconductor substrate, with the transistor having source and drain regions (14,15) with a channel region (20) extending there between to conduct current. The channel region has a resistance when conducting current to generate heat above a selected threshold. A dielectric layer is disposed on the channel region and a gate electrode (26) is disposed on the dielectric layer to control the current of the channel region. A thermally insulating barrier may be formed in the semiconductor material extending about the transistor. The object to be heated is positioned to receive the heat generated by the resistance of the channel region; the object may be a fluid chamber.

Abstract translation: 在半导体衬底中形成为场效应晶体管的集成加热器，其中晶体管具有源极和漏极区域（14,15），沟道区域（20）在其间延伸以传导电流。 当导通电流以产生高于所选阈值的热量时，沟道区域具有电阻。 电介质层设置在沟道区上，并且在电介质层上设置栅电极（26）以控制沟道区的电流。 可以在围绕晶体管延伸的半导体材料中形成隔热屏障。 被加热物被定位成接收由通道区域的电阻产生的热量; 物体可以是流体室。

公开(公告)号：EP1324395A3

公开(公告)日：2007-08-01

申请号：EP02258606.9

申请日：2002-12-13

Applicant: STMicroelectronics, Inc.

Inventor： Santoruvo, Gaetano ,  Lo Priore, Stefano

IPC: H01L29/78 ,  H01L27/02

CPC classification number: H05B3/28 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00873 ,  B01L3/5027 ,  B01L7/52 ,  B41J2/14129 ,  B41J2202/13 ,  H01L23/345 ,  H01L27/1203 ,  H01L29/0657 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated heater formed as a field effect transistor in a semiconductor substrate, with the transistor having source and drain regions (14,15) with a channel region (20) extending there between to conduct current. The channel region has a resistance when conducting current to generate heat above a selected threshold. A dielectric layer is disposed on the channel region and a gate electrode (26) is disposed on the dielectric layer to control the current of the channel region. A thermally insulating barrier may be formed in the semiconductor material extending about the transistor. The object to be heated is positioned to receive the heat generated by the resistance of the channel region; the object may be a fluid chamber.