Abstract:
An apparatus for performing metrology of a wafer. The apparatus may include a substrate with a plurality of microprobes (520). A plurality of light sources may direct light onto each of the microprobes (520). Light reflected from the microprobes may be detected by a plurality of photodetectors thereby generating a detection signal associated with each of the microprobes. A controller (610)may send a driving signal to each of the plurality of microprobes and determine a height profile and a surface charge profile of the wafer based on each of the detection signals.
Abstract:
A semiconductor processing device and a method of operating the same. The method may include measuring at least one property of a semiconductor wafer and determining a recipe for processing the semiconductor wafer based on the at least one property. The semiconductor wafer may be processed with a plurality of chemical mechanical polishing (CMP) modules based on the determined recipe, wherein the recipe comprises a value of at least one parameter for use by each of the plurality of CMP modules. The measurements may be made in situ or by an inline metrology device. The recipe and various parameters associated with the recipe may be determined by a controller of the semiconductor processing device.
Abstract:
An integrated tool to reduce defects in manufacturing a semiconductor device by reducing queue times during a manufacturing process. The integrated tool may include at least one a polishing tool comprising at least one polishing module and at once deposition tool comprising at once deposition chamber. At least one pump-down chamber may connect the polishing tool to the deposition tool. The at once pump-down chamber includes a through which the semiconductor device is passed. Defects in the semiconductor device are reduced by reducing the queue time at various stages of the fabrication process.
Abstract:
An apparatus for performing metrology of a wafer. The apparatus may include a substrate with a plurality of microprobes (520). A plurality of light sources may direct light onto each of the microprobes (520). Light reflected from the microprobes may be detected by a plurality of photodetectors thereby generating a detection signal associated with each of the microprobes. A controller (610)may send a driving signal to each of the plurality of microprobes and determine a height profile and a surface charge profile of the wafer based on each of the detection signals.
Abstract:
A plurality of metal tracks (48a, 48b, 48c) are formed in a plurality of intermetal dielectric layers (38) stacked in an integrated circuit die. Thin protective dielectric layers (52a, 52b) are formed around the metal tracks. The protective dielectric layers act as a hard mask to define contact vias (64a, 64b, 64c) between metal tracks in the intermetal dielectric layers.
Abstract:
A plurality of metal tracks (32,50,66) are formed in an integrated circuit die (20) in three metal layers stacked within the die. A protective dielectric layer (42,52) is formed around metal tracks of an intermediate metal layer (50). The protective dielectric layer acts as a hard mask to define contact vias (49) between metal tracks in the metal layers above and below the intermediate metal layer.