中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.023 seconds)

    INDIRECT TIME OF FLIGHT SENSOR AND METHOD
    1.
    发明申请
    INDIRECT TIME OF FLIGHT SENSOR AND METHOD 有权

    公开(公告)号：US20220276356A1

    公开(公告)日：2022-09-01

    申请号：US17652177

    申请日：2022-02-23

    Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Cedric Tubert ,  Pierre Malinge ,  Matteo Maria Vignetti

    IPC: G01S7/4865 ,  G01S7/4861

    Abstract: The present description concerns a sensor and method. Each pixel of the sensor comprises assemblies each including a memory area and a transfer device coupling the memory area to a photoconversion area, and a device for resetting the memory areas. The sensor includes a first circuit controlling the transfer devices and a second circuit controlling the reset devices. During each integration phase, the second circuit orders the end of a phase of reset of the memory areas of first pixels at the beginning of the integration phase and the end of a phase of reset of the memory areas of second pixels at a time subsequent to the beginning of the integration phase.

    Image sensor using a global shutter and method for controlling same
    6.
    发明授权
    Image sensor using a global shutter and method for controlling same 有权

    公开(公告)号：US11451730B2

    公开(公告)日：2022-09-20

    申请号：US16890877

    申请日：2020-06-02

    Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Pierre Malinge ,  Frederic Lalanne ,  Laurent Simony

    IPC: H04N5/3745 ,  H04N5/355

    Abstract: An image sensor includes pixels each including: a first transistor and a first switch that are connected in series between a first node configured to receive a first potential and an internal node of the pixel, a gate of the first transistor being coupled with a floating diffusion node of the pixel; a capacitive element, a first terminal of which is connected to the floating diffusion node of the pixel; and several assemblies each including a capacitance connected in series with a second switch coupling the capacitance to the internal node. The sensor also includes a control circuit configured to control, each time a voltage is stored in one of the assemblies of a pixel, an increase of a determined value of a difference in potential between the floating diffusion node and the internal node of the pixel.

    Global shutter imager device
    7.
    发明授权
    Global shutter imager device 有权

    公开(公告)号：US10924700B2

    公开(公告)日：2021-02-16

    申请号：US16599875

    申请日：2019-10-11

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Pierre Malinge

    IPC: H04N5/3745 ,  H04N5/235 ,  G09G5/42

    Abstract: A pixel of an imager device includes a photosensitive area configured to integrate a light signal. A first capacitive storage node is configured to receive a signal representative of the number of charges generated by the photosensitive area. A second capacitive storage node is configured to receive a reference signal. A first transfer transistor is coupled between the first capacitive storage node and the photosensitive area. A second transfer transistor is coupled between the second capacitive storage node and a terminal which supplied the reference signal. The first and second two transfer transistors have a common conduction electrode and a common substrate, wherein the common substrate is coupled to the first capacitive storage node.

    Image sensor and method for controlling same
    9.
    发明授权
    Image sensor and method for controlling same 有权

    公开(公告)号：US11212475B2

    公开(公告)日：2021-12-28

    申请号：US16890944

    申请日：2020-06-02

    Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Laurent Simony ,  Pierre Malinge

    IPC: H04N5/374 ,  H04N5/341 ,  H04N5/355

    Abstract: A sensor includes pixels each including: a first transistor and a first switch in series between a first node and an internal node of the pixel, a gate of the first transistor being coupled to a second node; a capacitive element, a first terminal of which is connected to the second node; and a plurality of assemblies each including a capacitance in series with a second switch coupled to the internal node. The sensor includes a circuit configured to control, each time a voltage is stored in one of the assemblies, the interruption of a current between the first node and the internal node: by switching a first potential applied to a second terminal of the capacitive element; or by opening the first switch.

Patent Agency Ranking