公开(公告)号：EP1887333B1

公开(公告)日：2011-05-04

申请号：EP06118479.2

申请日：2006-08-04

Applicant: STMicroelectronics Design and Application S.R.O.

Inventor： Jahelka, Tomas ,  Schindler, Jaromir

IPC: G01K7/01 ,  H03F1/52 ,  G05F1/569

CPC classification number: G05F1/569 ,  G01K7/015 ,  H03F1/52 ,  H03F2200/441 ,  H03F2200/447 ,  H03F2200/468 ,  H03F2200/78

公开(公告)号：EP1887333A3

公开(公告)日：2008-12-17

申请号：EP06118479.2

申请日：2006-08-04

Applicant: STMicroelectronics Design and Application S.R.O.

Inventor： Jahelka, Tomas ,  Schindler, Jaromir

IPC: G01K7/01 ,  H03F1/52 ,  G05F1/569

CPC classification number: G05F1/569 ,  G01K7/015 ,  H03F1/52 ,  H03F2200/441 ,  H03F2200/447 ,  H03F2200/468 ,  H03F2200/78

Abstract: A microelectronic device includes a first circuit (21, 22, 25) and a second circuit (23), coupled to the first circuit (21, 22, 25) for selectively preventing operation of the first circuit (21, 22, 25) when a device temperature (T) is higher than a temperature threshold (T SD ). The second circuit is provided with a temperature responsive element (28), thermally coupled to the first circuit (21, 22, 25) for providing a shutdown signal (I SD ) correlated to the device temperature (T). The temperature responsive element (28; 105) includes a reverse-biased junction element (30) and the shutdown signal (I SD ) is correlated to a reverse leakage current (I R ) of the reverse-biased junction element (30).

公开(公告)号：EP1887333A1

公开(公告)日：2008-02-13

申请号：EP06118479.2

申请日：2006-08-04

Applicant: STMicroelectronics Design and Application S.R.O.

Inventor： Jahelka, Tomas ,  Schindler, Jaromir

IPC: G01K7/01 ,  H03F1/52 ,  G05F1/569

CPC classification number: G05F1/569 ,  G01K7/015 ,  H03F1/52 ,  H03F2200/441 ,  H03F2200/447 ,  H03F2200/468 ,  H03F2200/78

Abstract: A microelectronic device includes a first circuit (21, 22, 25) and a second circuit (23), coupled to the first circuit (21, 22, 25) for selectively preventing operation of the first circuit (21, 22, 25) when a device temperature (T) is higher than a temperature threshold (T SD ). The second circuit is provided with a temperature responsive element (28), thermally coupled to the first circuit (21, 22, 25) for providing a shutdown signal (I SD ) correlated to the device temperature (T). The temperature responsive element (28; 105) includes a reverse-biased junction element (30) and the shutdown signal (I SD ) is correlated to a reverse leakage current (I R ) of the reverse-biased junction element (30).

Abstract translation: 一种微电子装置包括：第一电路（21，22，25）和耦合到所述第一电路（21，22，25），用于在第一电路的选择性地防止手术的第二电路（23）（21，22，25）当 的装置的温度（T）为高于温度阈值（T SD）较高。 所述第二电路被提供有一个温度响应元件（28），热耦合到所述第一电路（21，22，25），用于提供关联于装置的温度（T）关机信号（I SD）。 温度响应元件（28; 105）包括一个反向偏置的结元件（30）和关机信号（I SD）相关于反向偏置结元件（30）的反向漏电流（I R）。