公开(公告)号：US20240429232A1

公开(公告)日：2024-12-26

申请号：US18747571

申请日：2024-06-19

Applicant: STMicroelectronics International N.V.

Inventor： Abderrezak MARZAKI ,  Alexandre VILLARET

IPC: H01L27/06 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: An integrated circuit includes a substrate having a front face. A capacitive element includes, over a surface at the front face, a stack made of: a first conductive armature, a dielectric interface region over the first conductive armature, and a second conductive armature over the dielectric interface region. The first conductive armature includes a gate metal layer located over a layer of a material with a high dielectric constant.