公开(公告)号：US20250081494A1

公开(公告)日：2025-03-06

申请号：US18458877

申请日：2023-08-30

Applicant: STMicroelectronics International N.V.

Inventor： Arnaud YVON

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778

Abstract: A process forms a high electron mobility transistor (HEMT) device with a recessed gate without damaging sensitive areas of the HEMT device. The process utilizes a first epitaxial growth process to grow a first set of layers of the HEMT. The epitaxial growth process is then stopped and a passivation layer is formed on the first set of layers. The passivation layer is then patterned to provide a passivation structure at a desired location of the recessed gate electrode. The channel layer and one or more barrier layers are then formed in a second epitaxial growth process in the presence of the passivation structure. The result is that the channel layer and the barrier layer growth around the passivation structure. The passivation structure is then removed, effectively leaving a recess in the channel layer. The gate electrode is then formed in the recess.