公开(公告)号：US20250133843A1

公开(公告)日：2025-04-24

申请号：US18917639

申请日：2024-10-16

Applicant: STMicroelectronics International N.V.

Inventor： Isobel NICHOLSON ,  Dominique GOLANSKI ,  Bastien MAMDY

IPC: H01L27/146

Abstract: An avalanche photodiode includes first semiconductor region of a first conductivity type in a semiconductor substrate and a second semiconductor region of a second conductivity type in the semiconductor substrate which forming a PN junction to be reverse-biased. A third semiconductor region of the second conductivity type in the semiconductor substrate is positioned such that the second region is closer to the first region than the third region. A fourth semiconductor region of the second conductivity type in a semiconductor substrate is in contact with the second and third regions. A dopant concentration of the fourth region is less than dopant concentrations of the second and third regions. The fourth region is arranged to at least partially surround the second region, and the third region is arranged to at least partially surround the fourth region.

公开(公告)号：US20250022894A1

公开(公告)日：2025-01-16

申请号：US18761207

申请日：2024-07-01

Applicant: STMicroelectronics International N.V.

Inventor： Giulio FORCOLIN ,  Raul Andres BIANCHI ,  Isobel NICHOLSON

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/18

Abstract: A pixel includes, on a first face, first trenches extending parallel to a first direction and regularly spaced in a second direction (orthogonal to the first direction) and second trenches extending parallel to the second direction and regularly spaced in the first direction. The first trenches include first notches, each first notch extending from a first trench and being aligned with a corresponding second trench. The second trenches include second notches, each second notch extending from a second trench and being aligned with a corresponding first trench.