公开(公告)号：US20240292610A1

公开(公告)日：2024-08-29

申请号：US18586440

申请日：2024-02-24

Applicant: STMicroelectronics International N.V.

Inventor： Pascal FORNARA

IPC: H10B20/25 ,  G11C17/06 ,  G11C17/18 ,  H10B99/00

CPC classification number: H10B20/25 ,  G11C17/06 ,  G11C17/18 ,  H10B99/16

Abstract: A memory cell is formed by a PIN diode having three contacts. A breakdown voltage is applied to break down a gate oxide arranged between a region of the PIN diode and a substrate region. The breakdown or non-breakdown state of the gate oxide is determined by applying a read voltage between the anode and the cathode of the diode and determining the value of the corresponding current flowing in the diode.