公开(公告)号：US20250006267A1

公开(公告)日：2025-01-02

申请号：US18753094

申请日：2024-06-25

Applicant: STMicroelectronics International N.V.

Inventor： Radouane Habhab ,  Vincenzo Della Marca ,  Nadia Miridi ép Seroschtanoff ,  Pascal Masson ,  Franck Melul ,  Madjid Akbal

IPC: G11C16/10 ,  H01L29/423 ,  H10B43/27

Abstract: The non-volatile memory device includes memory cells including a control gate vertically buried in a semiconductor substrate doped with a first type of dopant and a dielectric interface able to trap electrical charges covering sides of the control gate facing the semiconductor substrate. The device furthermore includes a vertical implanted region of a second type of dopant opposite to the first type located along the sides of the control gate in the semiconductor substrate.