公开(公告)号：US20250155640A1

公开(公告)日：2025-05-15

申请号：US18922884

申请日：2024-10-22

Applicant: STMicroelectronics International N.V.

Inventor： Sébastien Cremer ,  Frédéric Boeuf

IPC: G02B6/13

Abstract: A method of manufacturing a photonic device comprises, successively, forming on a first substrate at least one metallization level and a first bonding layer, forming on a second high-resistivity substrate a second bonding layer, bonding the first bonding layer to the second bonding layer, removing the first substrate; and forming a first optical component on the at least one metallization level. A sum of the thicknesses of the first and second bonding layers and of the thickness of the at least one metallization level is greater than 3 μm.