公开(公告)号：US20250142865A1

公开(公告)日：2025-05-01

申请号：US18494401

申请日：2023-10-25

Applicant: STMicroelectronics International N.V.

Inventor： Aurore CONSTANT ,  Tariq WAKRIM ,  Ferdinando IUCOLANO

IPC: H01L29/778 ,  H01L21/265 ,  H01L21/266 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

Abstract: A process for forming a high electron mobility transistor (HEMT) includes forming a semiconductor heterostructure including a channel layer of the HEMT, forming a gate layer of GaN on the channel layer, and patterning the gate layer to form a first gate finger, a second gate finger, and a gate arc connecting the first gate finger and the second gate finger. The process includes forming an isolation mask covering an active region of the semiconductor heterostructure and the gate arc and performing an ion bombardment process on an inactive region of the semiconductor heterostructure exposed by the isolation mask.