公开(公告)号：US20250142864A1

公开(公告)日：2025-05-01

申请号：US18385067

申请日：2023-10-30

Applicant: STMicroelectronics International N.V.

Inventor： Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Maria Eloisa CASTAGNA ,  Giovanni GIORGINO ,  Aurore CONSTANT ,  Virgil GUILLON

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

Abstract: Methods, systems, and apparatuses for normally off HEMT are provided, including for in situ plasma treatment before Al2O3 deposition for improved on on-hydrogen-based resistance. An exemplary method may include providing a wafer comprising a AlGaN layer and a p-GaN layer; etching the p-GaN layer to form a p-GaN gate; depositing a first aluminum oxide layer over the p-GaN gate; depositing a silicon dioxide layer over the aluminum layer; etching the silicon dioxide layer and the aluminum oxide layer to expose a first portion of the AlGaN layer starting a first distance from the p-GaN gate; treating the first portion of the AlGaN layer with an in-situ hydrogen-based plasma treatment, wherein the in situ plasma treatment deactivates magnesium in the first portion of the AlGaN layer; and forming at least a first normally-off HEMT, wherein the gate of the normally-off HEMT is the first p-GaN gate.

公开(公告)号：US20250142862A1

公开(公告)日：2025-05-01

申请号：US18385137

申请日：2023-10-30

Applicant: STMicroelectronics International N.V.

Inventor： Giovanni GIORGINO ,  Maria Eloisa CASTAGNA ,  Virgil GUILLON ,  Cristina TRINGALI ,  Ferdinando IUCOLANO ,  Aurore CONSTANT

IPC: H01L29/778 ,  H01L21/02 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/20 ,  H01L29/66

Abstract: Methods, systems, and apparatuses for normally-on GaN high electron mobility transistors (HEMT) integration on monolithic p-GaN integrated circuits (ICs) platforms are provided. In particular, the integrated circuit platforms may include both enhancement mode and depletion mode HEMT power devices in monolithically integrated p-GaN power ICs. Exemplary methods may include treating at least one of a plurality of p-GaN gates with an in-situ plasma treatment to deactivate Mg in the p-GaN gate treated and deplete this p-Gan gate of Mg. The depleted p-GaN gate may be the gate for the normally on HEMT in the IC. At least one of the p-GaN gates not exposed to the in-situ plasma pretreatment may be the gate of the normally off HEMT in the IC.