公开(公告)号：EP1162624A3

公开(公告)日：2002-10-30

申请号：EP01304380.7

申请日：2001-05-17

Applicant: STMicroelectronics Limited

Inventor： Docker, Steven Charles ,  Galbi, Duane

IPC: G11C7/10

CPC classification number: G11C7/1069 ,  G11C7/1012 ,  G11C7/1051 ,  G11C7/1078

Abstract: Circuitry for reading from and writing to memory cells of a group of memory cells. The circuitry comprises read circuitry and write circuitry each connectable to bit lines associated with respective ones of the memory cells. The read circuitry is arranged to read from the cells and the write circuitry is arranged to write to the cells. Wherein the read circuitry and write circuitry are configured so that more cells in the group can be simultaneously written to during a write operation than can be simultaneously read from during a read operation.

公开(公告)号：EP1162624A2

公开(公告)日：2001-12-12

申请号：EP01304380.7

申请日：2001-05-17

Applicant: STMicroelectronics Limited

Inventor： Docker, Steven Charles ,  Galbi, Duane

IPC: G11C7/10

CPC classification number: G11C7/1069 ,  G11C7/1012 ,  G11C7/1051 ,  G11C7/1078

Abstract: Circuitry for reading from and writing to memory cells of a group of memory cells. The circuitry comprises read circuitry and write circuitry each connectable to bit lines associated with respective ones of the memory cells. The read circuitry is arranged to read from the cells and the write circuitry is arranged to write to the cells. Wherein the read circuitry and write circuitry are configured so that more cells in the group can be simultaneously written to during a write operation than can be simultaneously read from during a read operation.

Abstract translation: 用于从一组存储器单元读取和写入存储单元的电路。 电路包括读取电路和写入电路，每个可读取电路和写入电路可连接到与相应存储器单元相关联的位线。 读取电路被布置成从单元读取并且写入电路被布置成写入单元。 其中读取电路和写入电路被配置为使得在写入操作期间可以在读取操作期间同时读取组中的更多单元。