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1.发明授权Method of manufacturing a silicide semiconductor element with polysilicon regions 失效一种生产具有多晶硅区的硅化物半导体元件的方法
公开(公告)号：EP0289163B1
公开(公告)日：1999-07-21
申请号：EP88303253.4
申请日：1988-04-12
Applicant: STMicroelectronics Limited
IPC: H01L27/13 , H01L21/768 , H01L21/31
CPC classification number: H01L28/24 , H01L21/0272 , H01L27/11 , H01L27/1112 , H01L28/20 , Y10S257/904
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