公开(公告)号：EP2180408B1

公开(公告)日：2018-08-29

申请号：EP08358013.4

申请日：2008-10-23

Applicant: STMicroelectronics N.V. ,  STMicroelectronics GmbH

Inventor： Bildgen, Marco ,  Boehler, Juergen

IPC: G06F12/0804 ,  G06F12/02 ,  G06F11/14

CPC classification number: G06F12/0246 ,  G06F11/1441 ,  G06F12/0804 ,  G06F2212/1036 ,  G06F2212/7203

Abstract: The present invention provides a method for writing and reading data in a main nonvolatile memory (MM) comprising target pages (Pi, P1-P3) in which data are to be written and read, the method comprising: providing a nonvolatile buffer (NVB) having an erased area, providing a volatile cache memory (CM), and receiving a write command aiming to update a target page with updating data the length of which can be lower than the length of a page. The method also comprises, in response to the write command: writing the updating data into the erased area of the nonvolatile buffer, together with management data of a first type; and recording an updated version of the target page in the cache memory or updating in the cache memory a previously updated version of the target page.

公开(公告)号：EP2180408A1

公开(公告)日：2010-04-28

申请号：EP08358013.4

申请日：2008-10-23

Applicant: STMicroelectronics N.V. ,  STMicroelectronics GmbH

Inventor： Bildgen, Marco ,  Boehler, Juergen

IPC: G06F12/08

CPC classification number: G06F12/0246 ,  G06F11/1441 ,  G06F12/0804 ,  G06F2212/1036 ,  G06F2212/7203

Abstract: The present invention provides a method for writing and reading data in a main nonvolatile memory (MM) comprising target pages (Pi, P1-P3) in which data are to be written and read, the method comprising: providing a nonvolatile buffer (NVB) having an erased area, providing a volatile cache memory (CM), and receiving a write command aiming to update a target page with updating data the length of which can be lower than the length of a page. The method also comprises, in response to the write command: writing the updating data into the erased area of the nonvolatile buffer, together with management data of a first type; and recording an updated version of the target page in the cache memory or updating in the cache memory a previously updated version of the target page.

Abstract translation: 本发明提供一种用于在主非易失性存储器，其包含目标页面（PI，P1-P3），在该数据要被写入和读出，所述方法包括写入和读取数据（MM）的方法：提供非易失性缓存（NVB） 具有擦除区，提供挥发性高速缓冲存储器（CM），并接收写入命令旨在用更新数据，其长度可以比​​页的长度下，更新目标页面。 因此，该方法包括，响应于写入命令：将更新数据写入非易失性缓存的擦除区，具有第一类型的管理数据一起; 并且在高速缓存存储器或更新版本的目标页面的高速缓冲存储器中更新目标页面之前更新的版本记录。