公开(公告)号：EP1469523B1

公开(公告)日：2008-12-24

申请号：EP03425242.9

申请日：2003-04-18

Applicant: STMicroelectronics S.r.l.

Inventor： Fragapane, Leonardo ,  Alessandria, Antonino

IPC: H01L29/739 ,  H01L27/07 ,  H01L27/02

CPC classification number: H01L29/866 ,  H01L27/0255 ,  H01L27/0788 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/7395

公开(公告)号：EP2924734A1

公开(公告)日：2015-09-30

申请号：EP15161793.3

申请日：2015-03-30

Applicant: STMicroelectronics S.r.l.

Inventor： Fragapane, Leonardo ,  Alessandria, Antonino

IPC: H01L27/08 ,  H01L27/06 ,  H01L27/07 ,  H01L29/868 ,  H01L29/78

CPC classification number: H01L29/868 ,  H01L27/0629 ,  H01L27/0664 ,  H01L27/0694 ,  H01L27/0727 ,  H01L27/0814 ,  H01L29/0692 ,  H01L29/36 ,  H01L29/43 ,  H01L29/66136 ,  H01L29/7804

Abstract: A diode (100; 200) is proposed. The diode is integrated on a chip (105) of semiconductor material having an anode surface (105a) and a cathode surface (105c) opposite to each other. The diode comprises at least one cathode region (120) having a doping of a first type, the cathode region extending from the cathode surface in the chip. Furthermore, the diode comprises an intrinsic region (130) having a doping of the first type with a dopant concentration lower than a dopant concentration of the cathode region, the intrinsic region extending between the anode surface and the cathode region. In addition, the diode comprises a plurality of anode regions (135c, 135f) having a doping of a second type, each anode region extending from the anode surface in the intrinsic region. The diode further comprises a cathode electrode (110) of electrically conductive material electrically coupled with said at least one cathode region on the cathode surface, and an anode electrode (115) of electrically conducting material. In the solution according to an embodiment of the present disclosure, one or more contacted anode regions (135c) of said anode regions are electrically coupled with the anode electrode on the anode surface, and one or more floating anode regions (135f) of said anode regions are electrically insulated from the anode electrode. The diode is configured so that charge carriers are injected from said at least one floating anode region into the intrinsic region in response to the applying of a control voltage between the anode electrode and the cathode electrode exceeding a threshold voltage of the diode.

Abstract translation: 提出了二极管（100; 200）。 二极管集成在具有彼此相对的阳极表面（105a）和阴极表面（105c）的半导体材料的芯片（105）上。 二极管包括至少一个具有第一类型掺杂的阴极区域（120），阴极区域从芯片中的阴极表面延伸。 此外，二极管包括具有掺杂浓度低于阴极区域的掺杂剂浓度的第一类型的本征区域（130），本征区域在阳极表面和阴极区域之间延伸。 此外，二极管包括具有第二类型的掺杂的多个阳极区域（135c，135f），每个阳极区域在本征区域中从阳极表面延伸。 二极管还包括与阴极表面上的所述至少一个阴极区电耦合的导电材料的阴极电极和导电材料的阳极电极。 在根据本公开的实施例的解决方案中，所述阳极区域的一个或多个接触阳极区域（135c）与阳极表面上的阳极电电耦合，并且所述阳极的一个或多个浮动阳极区域（135f） 区域与阳极电极电绝缘。 二极管被配置为使得电荷载流子响应于在阳极电极和阴极之间施加超过二极管的阈值电压的控制电压，从所述至少一个浮动阳极区域注入本征区域。

公开(公告)号：EP2924734B1

公开(公告)日：2018-11-28

申请号：EP15161793.3

申请日：2015-03-30

Applicant: STMicroelectronics S.r.l.

Inventor： Fragapane, Leonardo ,  Alessandria, Antonino

IPC: H01L27/08 ,  H01L27/06 ,  H01L27/07 ,  H01L29/868 ,  H01L29/78 ,  H01L29/36 ,  H01L29/43 ,  H01L29/06

CPC classification number: H01L29/868 ,  H01L27/0629 ,  H01L27/0664 ,  H01L27/0694 ,  H01L27/0727 ,  H01L27/0814 ,  H01L29/0692 ,  H01L29/36 ,  H01L29/43 ,  H01L29/66136 ,  H01L29/7804

Abstract: A diode (100; 200) is proposed. The diode is integrated on a chip (105) of semiconductor material having an anode surface (105a) and a cathode surface (105c) opposite to each other. The diode comprises at least one cathode region (120) having a doping of a first type, the cathode region extending from the cathode surface in the chip. Furthermore, the diode comprises an intrinsic region (130) having a doping of the first type with a dopant concentration lower than a dopant concentration of the cathode region, the intrinsic region extending between the anode surface and the cathode region. In addition, the diode comprises a plurality of anode regions (135c, 135f) having a doping of a second type, each anode region extending from the anode surface in the intrinsic region. The diode further comprises a cathode electrode (110) of electrically conductive material electrically coupled with said at least one cathode region on the cathode surface, and an anode electrode (115) of electrically conducting material. In the solution according to an embodiment of the present disclosure, one or more contacted anode regions (135c) of said anode regions are electrically coupled with the anode electrode on the anode surface, and one or more floating anode regions (135f) of said anode regions are electrically insulated from the anode electrode. The diode is configured so that charge carriers are injected from said at least one floating anode region into the intrinsic region in response to the applying of a control voltage between the anode electrode and the cathode electrode exceeding a threshold voltage of the diode.

公开(公告)号：EP1469523A1

公开(公告)日：2004-10-20

申请号：EP03425242.9

申请日：2003-04-18

Applicant: STMicroelectronics S.r.l.

Inventor： Fragapane, Leonardo ,  Alessandria, Antonino

IPC: H01L29/739 ,  H01L27/07 ,  H01L27/02

CPC classification number: H01L29/866 ,  H01L27/0255 ,  H01L27/0788 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/7395

Abstract: A junction device including at least a first type semiconductor region (33) and a a second type semiconductor region a(34), which are arranged contiguous to one another and have a first and, respectively, a second type of conductivity, which are opposite to one another, and a first and a second biasing region (37, 38); the device is moreover provided with a resistive region (35), which has the first type of conductivity and extends from the first type semiconductor region (33) and is contiguous to the second type semiconductor region (34) so as to form a resistive path between the first and the second biasing regions (37, 38).

Abstract translation: 甲结器件，包括至少一个第一型半导体区域（33）和aa第二型半导体区域（34）被布置邻接彼此和具有第一和分别的第二型导电性的，这是相反的 彼此，以及第一和第二偏置区域（37，38）; 该装置更上方设置有阻性区域（35），其具有第一导电类型并与所述第一型半导体区域（33）延伸，并邻接所述第二型半导体区域（34），以便形成一个电阻路径 第一和第二偏置区域（37，38）之间。