公开(公告)号：EP1763037A1

公开(公告)日：2007-03-14

申请号：EP05108235.2

申请日：2005-09-08

Applicant: STMicroelectronics S.r.l.

Inventor： Basco, Andrea ,  Volpe, Maria Viviana ,  Bevilacqua, Maria Fortuna ,  Casuscelli, Valeria

IPC: G11C13/02

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C2213/17 ,  G11C2213/53 ,  G11C2216/06 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/7881 ,  Y10S977/742 ,  Y10S977/841 ,  Y10S977/938

Abstract: A method for manufacturing a nanotube non-volatile memory cell ( 100 ) is proposed. The method includes the steps of: forming a source electrode ( 110 ) and a drain electrode ( 115 ), forming a nanotube ( 125 ) implementing a conduction channel between the source electrode and the drain electrode, forming an insulated floating gate ( 130 ) for storing electric charges by passivating conductive nanoparticles with passivation molecules and arranging a disposition of passivated conductive nanoparticles on the nanotube, the conductive nanoparticles being adapted to store the electric charges and being insulated by the passivation molecules from the nanotube, and forming a control gate ( 135,150;335 ) coupled with the channel.

Abstract translation: 一种用于制造碳纳米管的非易失性存储器单元（100）的方法，提出了 该方法包括以下步骤：形成一个形成纳米管（125）执行源电极和漏电极之间的导电沟道，形成在源电极（110）和漏极电极（115）绝缘的浮置栅极（130），用于 存储由负债婷导电纳米颗粒的电荷与钝化分子和在纳米管上设置钝化导电纳米粒子的配置，导电纳米颗粒是angepasst来存储电荷，并从所述纳米管被钝化分子被绝缘，并且形成控制栅极（135.150 ; 335）再加上信道。